100keV级金属离子束辐照影响金属材料二次电子发射特性的规律及其机理研究

批准号:
12005207
项目类别:
青年科学基金项目
资助金额:
24.0 万元
负责人:
赵伟
依托单位:
学科分类:
离子注入及离子束材料改性
结题年份:
2023
批准年份:
2020
项目状态:
已结题
项目参与者:
赵伟
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中文摘要
离子束材料表面改性技术在很多领域已得到广泛的应用,而利用离子束辐照来对材料的二次电子发射特性进行改性,还是一个较为新颖的研究方向。与能量仅为几keV的低能惰性气体离子束主要通过表面溅射改变金属材料的表面形貌、表面杂质元素含量进而改变金属材料的二次电子产额不同,能量为100keV级的金属离子束除了上述效应之外,还可能通过离子束的注入掺杂和在材料表面二次电子逃逸深度范围产生大量辐照缺陷等效应影响材料的二次电子发射过程。本项目以Ti和Au离子束、无氧铜和不锈钢为研究对象,研究离子束种类、能量、注量等辐照参数对样品二次电子发射特性的影响规律。采用多种表征方法对辐照效应进行分析,通过建立理论模型,结合数值仿真分析阐明100keV级离子辐照抑制金属材料二次电子发射的机理。项目研究成果有望在粒子加速器、航天器、高功率微波、电真空器件等领域的材料二次电子发射改性方面获得重要应用,促进这些设备的性能提升。
英文摘要
Surface modification technology of materials by ion beam irradiation has been widely applied in many fields, and the modification of secondary electron emission characteristics of materials by ion beam irradiation is still a relatively novel research field. Different from the low-energy inert gas ion beam with energy of only a few keV, which mainly changes the surface morphology and impurity element content of the metal material through surface sputtering, thus changing the secondary electron yield of the metal material, the metal ion beam with energy of the order of 100 keV may also affect the secondary electron emission process of the material through the effects of ion beam implantation doping, generation of a large number of irradiation defects in the depth range of secondary electron escape on the surface of the material. In this project, Ti and Au ion beams, oxygen-free copper and stainless steel are taken as research objects to study the influence of ion beam types, energy, flux and other irradiation parameters on the secondary electron emission characteristics of samples. The irradiation effect was analyzed by various characterization methods. The mechanism of inhibiting secondary electron emission of metal materials by ion beam irradiation of the order of 100 keV was clarified by establishing a theoretical model and combining with numerical simulation analysis. The research results of the project are expected to obtain important applications in particle accelerators, spacecraft, high-power microwaves, electric vacuum devices and other fields, promoting the performance improvement of these devices.
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DOI:doi:10.16540/j.cnki.cn11-2485/tn.2023.03.14
发表时间:2023
期刊:真空电子技术
影响因子:--
作者:刘平;赵伟;李建北;秦臻;黄刚;向军;李天涛;夏连胜
通讯作者:夏连胜
DOI:10.1021/acs.jpcc.3c04284
发表时间:2023-08
期刊:The Journal of Physical Chemistry C
影响因子:--
作者:M. Zhang;Lin Lei;Wei Zhao;Dingyu Yang;Xiaojia Zheng;Wen-Hua Zhang
通讯作者:M. Zhang;Lin Lei;Wei Zhao;Dingyu Yang;Xiaojia Zheng;Wen-Hua Zhang
DOI:https://doi.org/10.1016/j.carbon.2024.118852
发表时间:2024
期刊:Carbon
影响因子:--
作者:Xiaoning Zhang;Hao Gui;Jialong He;Ronghua Wang;Hui Zhao;Wei Zhao;Bin Tang;Jie Yang;Feixiang Liu;Xinlu Li;Kefu Liu;Jinshui Shi
通讯作者:Jinshui Shi
国内基金
海外基金
