氧化镓场效应晶体管增强型器件与可靠性
结题报告
批准号:
62004184
项目类别:
青年科学基金项目
资助金额:
24.0 万元
负责人:
徐光伟
依托单位:
学科分类:
半导体电子器件与集成
结题年份:
2023
批准年份:
2020
项目状态:
已结题
项目参与者:
徐光伟
国基评审专家1V1指导 中标率高出同行96.8%
结合最新热点,提供专业选题建议
深度指导申报书撰写,确保创新可行
指导项目中标800+,快速提高中标率
客服二维码
微信扫码咨询
中文摘要
氧化镓增强(常关)型场效应晶体管具有损耗低、速度快、易驱动等特点,是下一代功率电子器件最有力竞争者。本项目拟研究氧化镓场效应晶体管的增强型操作模式实现方法和器件可靠性分析及改善方法:(1)开发低损伤高温氧氛围退火与N离子注入技术,通过光学和电学测量手段研究高温氧氛围退火与N离子注入的耗尽或补偿机理;(2)辅以TCAD模拟,设计场板终端结构,研制高性能横向和垂直结构氧化镓增强型场效应晶体管;(3)采用正、负偏压变温测量、偏压变温CF测量等方法分析器件的可靠性和稳定性,探索缺陷影响晶体管稳定性的机理。通过后退火与双介质层堆叠等方法改善界面质量,研制出具有高稳定性的增强型场效应晶体管。本项目的研究成果将为氧化镓场效应晶体管走向电力电子系统应用奠定重要的基础。
英文摘要
The Gallium Oxide Metal-Oxide-Semiconductor Field Effect Transistors with enhancement mode are considered as the most promising candidate of the next power electronics due to low power loss, high switching speed and easy driving. This proposal will focus on the fabrication and reliability of enhancement mode MOSFETs including horizontal and vertical structure. The low damage method will be investigated to reduce charge density in the channel area like oxygen annealing and N ion implantation technology. The mechanism of oxygen annealing and N ion implantation technology applying to Gallium oxide will be figured out by optical and electrical measurement. New device structure will be designed by TCAD simulation, then the real devices will be fabricated according to the simulation. The reliability and stability will be analyzed by stress tests like positive bias stress, negative bias stress and et.al. The effect of defect on stability of MOSFET will be explored, importantly, the reliability and stability of transistors may be improved by defect removing method like annealing and passivation. This project will play a significant improvement on Gallium Oxide MOSFETs to the power electronic system application.
期刊论文列表
专著列表
科研奖励列表
会议论文列表
专利列表
DOI:10.1007/s40843-022-2167-x
发表时间:2022-09
期刊:Science China Materials
影响因子:--
作者:Xueqiang Xiang;Liheng Li; Chen-Chen-Chen;Guangwei Xu;F. Liang;Pengju Tan;Xuanze Zhou;Weibing Hao;Xiaolong Zhao;Haiding Sun;K. Xue;Nan Gao;Shibing Long
通讯作者:Xueqiang Xiang;Liheng Li; Chen-Chen-Chen;Guangwei Xu;F. Liang;Pengju Tan;Xuanze Zhou;Weibing Hao;Xiaolong Zhao;Haiding Sun;K. Xue;Nan Gao;Shibing Long
DOI:10.1109/jeds.2022.3212368
发表时间:2022
期刊:IEEE Journal of the Electron Devices Society
影响因子:2.3
作者:Weisi Guo;Guangzhong Jian;Weibing Hao;Feihong Wu;Kai Zhou;Jiahong Du;Xuanze Zhou;Qiming He;Zhaoan Yu;Xiaolong Zhao;Guangwei Xu;Shibing Long
通讯作者:Weisi Guo;Guangzhong Jian;Weibing Hao;Feihong Wu;Kai Zhou;Jiahong Du;Xuanze Zhou;Qiming He;Zhaoan Yu;Xiaolong Zhao;Guangwei Xu;Shibing Long
702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation
具有 N 离子注入的 702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga2O₃ U 形沟槽栅极 MOSFET
DOI:10.1109/led.2023.3235777
发表时间:2023
期刊:IEEE Electron Device Letters
影响因子:4.9
作者:Yongjian Ma;Xuanze Zhou;Wenbo Tang;Xiaodong Zhang;Guangwei Xu;Li Zhang;Tiwei Chen;Shige Dai;Chunxu Bian;Botong Li;Z. Zeng;Shibing Long
通讯作者:Shibing Long
Simulation studies of floating field plate in β-Ga2O3 power devices and modules
β-Ga2O3功率器件和模块中浮动场板的仿真研究
DOI:10.1116/6.0002650
发表时间:2023
期刊:Journal of Vacuum Science & Technology A
影响因子:--
作者:Zhao Han;Guangwei Xu;Xueqiang Xiang;Weibing Hao;Yuanbiao Li;Xuanze Zhou;X. Yan;Shibing Long
通讯作者:Shibing Long
DOI:10.1063/5.0161934
发表时间:2023
期刊:Applied Physics Letters
影响因子:--
作者:Jinyang Liu;Zhao Han;Lei Ren;Xiao Yang;Guangwei Xu;Weibing Hao;Xiaolong Zhao;Shu Yang;Di Lu;Yuncheng Han;Xiaohu Hou;Shibing Long
通讯作者:Shibing Long
国内基金
海外基金