太赫兹TMIC倍频辐射源，具有体积小、成本低、一致性、可靠性高等诸多优势，在太赫兹成像、通信等领域具有广泛的应用前景。本项目针对目前TMIC倍频辐射源存在的输出功率低、辐射效率低的问题，进行基于InP HBT工艺的相关科学问题和关键技术研究。拟从以下三个方面开展：研究多指DHBT器件工艺优化技术，探索多指器件多物理场耦合机理，建立动态大信号模型，并进行模型验证；研究电磁场与半导体材料器件的相互作用机制，结合AMC及3D打印透镜，设计高效片上天线；研究片上天线和TMIC倍频链路的协同设计方法，进而提升太赫兹TMIC倍频辐射源的辐射功率和效率。本课题完全基于自主工艺，从材料生长到器件建模方法、TMIC电路与片上天线的协同设计方法均享有自主知识产权。

TMIC radiated source based on the active frequency multiplier chain with on-chip antenna, extensively used in terahertz imaging and wireless communication applications, has advantages of compactness, low cost, high consistency and high reliability. Aiming at the current two major challenges: low signal power and poor antenna efficiency, this project researches on the scientific problems and key technologies in InP HBT technology. Planning to study on the following three aspects: research on the process optimization technique for multi-finger DHBT devices, explore multiphysics coupling mechanism on the multi-finger device, and establish the dynamic large signal model; study the interaction mechanism between electromagnetic filed and semiconductor material, and design the high efficient on-chip antenna with AMC and 3D printed lens; research the co-design method of the on-chip antenna and TMIC active multiplier chain to improve the signal power and efficiency of TMIC active multiplier chain. System independent intellectual property rights in InP based HBT material growth and large signal modeling method，co-design method of TMIC and on-chip antenna will be acquired.