随着硅晶体管尺寸逐渐达到其物理极限，人们开始把目光转向具有更加丰富物理现象的关联电子氧化物。基于关联电子氧化物Mott金属-绝缘体相变的新型Mott晶体管被认为没有物理极限，而且具有多功能、高速和低功耗等优点，成为"Beyond CMOS"新一代场效应晶体管有力的竞争者。针对目前Mott晶体管器件开关比不高、离子液体栅极电介质不稳定、集成度差等问题，本项目提出基于电场对Mott相变移动的调控、以"固态"离子凝胶为栅极电介质研制Mott晶体管的新思路。以室温上具有电阻突变特性的SmNiO3和VO2为研究对象，利用双电层结构巨大的载流子调控能力，开展电场对其Mott相变的调控研究，揭示静电场注入的载流子对关联电子氧化物的载流子局域化和晶体结构的影响规律，阐明Mott相变电场调控的机制，为开发具有自主知识产权的、高开关比、低能耗和高稳定性的"全固态"双电层Mott晶体管进行积极探索。

With the scaling of silicon field effect transistors (FETs) approaching physical limit. Correlated electron oxides (CEOs) have attracted increasing attention because of their rich physical phenomena. Based on Mott metal-insulator transition of CEOs, Mott transistors is believed to have advantages over silicon FETs in terms of no scaling limit, greater functionality, higher speed and lower energy consumption. Thus, the Mott transistor has been regarded as one of the most promising candidates for "Beyond CMOS" next generation FETs. However, the present Mott transistors are facing low ON/OFF ratio and the problems in stability and integration due to the liquid form of ionic liquid gate dielectric. To solve these problems, we propose a new route to design a Mott transistor based on a shift of Mott transition by electric field and use "solid" ion gels as gate dielectric. According to this new idea, SmNiO3 and VO2 are selected as the study objects because their Mott transitions show sharp resistance change above room temperature. With huge carrier modulation of electric double layer formed at the interface between ion gels and CEOs, the tuning of Mott transition by electric field will be conducted. We will investigate the effect of electrostatic carrier doping on carrier localization and structure of CEOs and reveal the mechanism of Mott transition controlled by electric filed. This research will shed some new light on fabrication of novel high-performance Mott transistors.