β-Ga2O3（Ga2O3）微纳米材料是制备日盲紫外探测器的优选材料之一。目前，Ga2O3微纳米材料平面结构探测器响应速度较慢，异质结或肖特基结垂直结构器件可实现快速响应。针对异质结器件面临的异质材料带隙窄，干扰日盲紫外信号的问题，以及肖特基结器件面临的底接触晶体质量和电学性能差，导致器件响应度较低的问题，本课题拟设计和制备以Sn掺杂n-Ga2O3微米带为底接触的Mott势垒型Ga2O3/n-Ga2O3核壳结构雪崩探测器。通过对材料和器件性能进行表征，研究n-Ga2O3材料特性与核壳结构材料特性以及器件光电特性之间的关系，通过能带理论和软件模拟解释探测器工作机制，揭示器件结构对光电特性的调控规律。Mott势垒型核壳结构雪崩探测器，有望为实现具有低暗电流、高响应度和快速响应特性的高性能日盲紫外器提供有效的解决方案，对Ga2O3日盲紫外探测器面向实际应用具有重要的意义。

β-Ga2O3（Ga2O3）based micro/nano materials are one of the candidates for fabricating solar-blind UV photodetectors. Nowadays, planar-structure solar-blind UV photodetectors based on Ga2O3 micro/nano materials possess a slow response speed, while photodetectors based on heterojunction or Schottky junction vertical structure is able to realize fast response. Considering the problems of narrow bandgap of hetero-material interfering solar-blind UV signal, and the poor crystal quality and electrical properties from bottom contact material resulting in the low responsivity of photodetector, our project will design and demonstrate Mott barrier-type Ga2O3/n-Ga2O3 core-shell structure avalanche photodetector, in which Sn-doped n-Ga2O3 microribbons serve as the bottom contact layer. Through charactering the material and device properties, researches of the relationship of material properties of n-Ga2O3 and core-shell structure and the relationship of their material properties and photoelectrical properties of the photodetector will be carried out. Through energy band theory and software simulation , the working mechanism of photodetector will be explained, revealling the controlling mechanism of device structure to photoelectrial properties. Mott barrier-type core-shell structure avalanche photodetector is anticipated to provide a feasible strategy to realize high performance solar-blind UV photodetectors with low dark current, high responsivity, and fast response speed, which will be of significant importance to promote their practical applications in the future.