拓扑材料是一类新的物质形态：在样品内部是有能隙的绝缘体态或超导体态，而在边界上是导电金属态。边界上的态称拓扑边界态，它受拓扑的保护，具有特殊的稳定性。我们将在拓扑边界态的位置空间自旋纹理和特殊输运性质及其自旋电子学应用做深入研究。我们先找出已经发现的拓扑态中可能存在自旋纹理的拓扑边界态，也将证明其普遍性。还将研究无序，相互作用，耗散和噪声对拓扑以及对拓扑边界态的影响，特别关注存在平均对称性的系统和可分离体系。利用拓扑边界态的特殊输运特性和自旋纹理，我们将设计一些自旋电子学器件，包括利用自旋纹理对参数的依赖做信息存储，利用极化的边界态做自旋场效应管，利用量子自旋霍尔效应做量子态测量等等。拓扑缺陷，近邻效应和拓扑边界态的有限尺寸效应，将对拓扑材料的输运性质和自旋纹理产生影响，我们考虑把它们应用于自旋电子学器件的调控上面。我们也考虑和实验物理学家合作，制作出拓扑材料的自旋电子学原型器件。

Topological materials is a new state of matter: it is a gapped insulator in the bulk while on the boundary it is conducting state. The boundary state is called topological boundary state which is protected by topology and have special stability. We will focus on the spin texture and special transportation properties of topological boundary state and its application in spintronic devices. We will investigate all found topological states and find out those supporting position space spin texture and will prove the universality of such spin texture by using the effective field theory. The stability of spin texture is due to its not trivial topology which is protected by certain symmetry. We will investigate the effects on symmetry and topology caused by the disorder,dissipation, noise and interaction. The position space spin texture,and special transportation properties of topological edge states provide a new platform for the spintronics, our purpose is to design some quantum devices, such as a spin field effect transistor, qubits and quantum measure device making use of the quantum spin Hall effects. The defects in topological states, proximity effects and the finite size effects of topological boundary states will modify the transport properties and the spin texture of the topological boundary states. We will apply these to the control of spintronics devices. We will also collaborate with experimentalists to make the protypes of such topological material based spintronic devices.