自2009至2018年，基于Eu:GaN薄膜的红光LED研发进展迅速，功率增长了近三个数量级。由于其没有InGaN/GaN多量子阱结构的红光LED的相分凝和大电流注入下的发光峰宽化问题，很有希望应用于基于氮化物的三基色单片集成和全彩高分辨显示领域。而Eu在GaN薄膜中的局域微结构对发光性能的影响机制是这一领域的关键科学问题。本项目拟通过具有原子分辨率的Cs-corrected STEM表征，辅以EXAFS，PAS等微结构分析手段，结合第一性原理计算获得Eu离子局域微结构；采用纳尺度局域激发手段SEM-CL和STEM-CL层层深入对Eu:GaN薄膜的发光特性进行表征，建立Eu离子局域微结构和发光性能的关联机制。在此基础上通过生长优化来实现对Eu离子局域微结构的有效调控，获得具有优异发光性能的Eu:GaN薄膜和器件，推动基于氮化物的三基色单片集成和全彩高分辨显示走向实际应用。

From 2009 to 2018 years, the power of Eu:GaN based red light LED devices have increased three orders of magnitude. It has not such shortcomings such as phase segregation and luminescent peak broadening under large current injection of InGaN/GaN multi quantum well based red LED. Therefore, it is very promising to be applied in the field of the nitride-based monolithic integration of the three primary colors and full-color high-resolution displays. The effect of Eu local microstructure to luminescent performance is the key scientific problem. In this project, atomic resolution Cs-corrected STEM, EXAFS, PAS and first principle calculation will be used to investigate the local micro-structure of Eu ions, nanometer-area luminescence SEM-CL and STEM-CL will be used to characterize the luminescence properties of Eu-doped GaN films step by step. We wish to establish the influence mechanism of local micro-structure of Eu ion on luminescence properties. On this basis, Eu ion local microstructures can be effectively regulated by growth optimization. As a result, we can obtain Eu: GaN red LED with excellent performance and push the nitride-based monolithic integration of the three primary colors and full-color high-resolution displays to application.