垂直结构GaN晶体管再生长界面调控及其物理特性研究

批准号:
62004218
项目类别:
青年科学基金项目
资助金额:
24.0 万元
负责人:
邓震
依托单位:
学科分类:
半导体材料
结题年份:
2023
批准年份:
2020
项目状态:
已结题
项目参与者:
邓震
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中文摘要
垂直结构GaN晶体管拥有能够接近理论性能极限、高芯片集成度及高效热管理的优势,因此其在电力电子器件领域有着重要的战略意义。然而GaN再生长时衬底表面杂质及较高的缺陷密度影响着垂直结构GaN晶体管的可靠性及性能。研究表明,这些难题有望通过有效的GaN再生长界面调控获得解决。本项目拟通过在再生长时表面的原位处理、结合MOCVD生长动力学的工作,综合考虑沾污来源、初始表面形貌、缺陷形成及杂质并入等影响因素,对GaN再生长中的界面调控机理进行深入研究,分析其与界面处相关物理特性之间的关系。通过腐蚀方式调整、热力学计算等方法结合工艺优化,获得纳米尺度平整、无杂质的原位处理表面,另一方面通过外延生长设计及微观结构表征等方法,结合动力学调控,实现二维生长模式、低缺陷密度的GaN再生长初始界面,为垂直结构GaN晶体管技术遇到的电流拥挤,过早击穿、理论支撑不足等关键瓶颈问题提供理论指导和工艺解决方案。
英文摘要
Since GaN vertical structure transistor has the advantages of approaching the theoretical performance limit, high chip integration and better efficient thermal management, it is a strategic semiconductor material in the field of power electronic devices. However, the impurity on the substrate surface and high defect density have affected the reliability and performance of GaN vertical structure transistors during GaN regrowth. Recent studies suggest that these problems are expected to be solved by effective GaN regrowth interface regulation. . By focusing on the following three scientific issues that are (i) physical mechanism of atomic- scale surface control during in-situ treatment, (ii) epitaxial growth kinetics control of GaN regrowth and (iii) the relationship between interfacial physical characteristics and interfacial impurities(and defects)during GaN regrowth, we plan to carry out the work of surface in-situ treatment and MOCVD growth to study the interfacial control mechanism during the growth with considering the factors including contamination source, initial surface morphology, defect formation, impurity incorporation and mask layer and so on. After that, we will analyze the relationship between above factors and the interfacial physical characteristics and then establish the corresponding physical model. On the one hand, we plan to obtain an atomic-scale flat regrowth surface with no impurities for GaN substrate in-situ treatment by corrosion adjustment, thermodynamic calculation and process optimization. On the other hand, in order to realize two-dimensional growth mode and low defect density during the initial GaN regrowth interface by means of epitaxial growth design, microstructure characterization, and dynamic regulation.. For GaN vertical transistor technology, several issues have to be overcome, such as current crowding effect, premature breakdown voltage in some area. Towards these problems, the purpose of this project is to provide technical and theorectical solutions for them.
期刊论文列表
专著列表
科研奖励列表
会议论文列表
专利列表
DOI:DOI 10.1109/JPHOT.2022.3153649
发表时间:2022
期刊:IEEE Photonics Journal
影响因子:2.4
作者:Junyang Zhang;Xuanzhang Li;Chunhua Du;Yang Jiang;Ziguang Ma;Hong Chen;Haiqiang Jia;Wenxin Wang;Zhen Deng
通讯作者:Zhen Deng
DOI:10.1016/j.vacuum.2022.111063
发表时间:2022-04
期刊:Vacuum
影响因子:4
作者:Zhaole Su;Rui Kong;Xiaotao Hu;Yimeng Song;Zhen Deng;Yang Jiang;Yangfeng Li;Hong Chen
通讯作者:Zhaole Su;Rui Kong;Xiaotao Hu;Yimeng Song;Zhen Deng;Yang Jiang;Yangfeng Li;Hong Chen
DOI:https://doi.org/10.3390/ma15093005
发表时间:2022
期刊:Materials
影响因子:3.4
作者:Zhaole Su;Yangfeng Li;Xiaotao Hu;Yimeng Song;Rui Kong;Zhen Deng;Ziguang Ma;Chunhua Du;Wenxin Wang;Haiqiang Jia;Hong Chen;Yang Jiang
通讯作者:Yang Jiang
DOI:10.1038/s41598-022-11946-7
发表时间:2022-05-10
期刊:Scientific reports
影响因子:4.6
作者:
通讯作者:
Role of low temperature Al(Ga)N interlayers on the polarity and quality control of GaN epitaxy
低温Al(Ga)N中间层对GaN外延极性和质量控制的作用
DOI:10.1016/j.jcrysgro.2022.126867
发表时间:2022
期刊:Journal of Crystal Growth
影响因子:1.8
作者:Zhaole Su;Yangfeng Li;H. Yin;Y. Hai;Xiaotao Hu;Yimeng Song;Rui Kong;Zhen Deng;Ziguang Ma;Chunhua Du;Wenxin Wang;H. Jia;Dahai Wang;Xinyu Liu;Yang Jiang;Hong Chen
通讯作者:Hong Chen
国内基金
海外基金
