二维过渡金属硫化物具有可观的室温载流子迁移率，一定的带隙，以及单个或少数几个原子层厚度，因此可以有效地抑制器件的"短沟道效应"，被认为是未来延续摩尔定律的理想材料。但是，由于对外界环境的敏感性，界面问题一直是阻碍二维过渡金属硫化物器件性能提升的难题。本项目将对基于石墨烯异质结构的二维过渡金属硫化物器件界面物性调控进行研究，主要研究内容如下：1、利用氧化石墨烯/二维过渡金属硫化物、石墨烯/二维过渡金属硫化物异质结构分别实现对器件沟道区和接触区界面物性的调控；2、研究氧化石墨烯屏蔽栅介质层中的散射中心、陷阱电荷等对沟道区载流子输运影响的作用机理；3、研究石墨烯插入层对接触区二维过渡金属硫化物的费米能级解钉扎效应的作用机理。通过本项目的研究将有助于提高器件载流子迁移率，降低接触电阻，为二维过渡金属硫化物器件在逻辑电路、柔性电子和光电探测等方面的应用提供技术与理论指导。

Because of its relatively high mobility, wide bandgap and layers of atomic thickness, two-dimensional (2D) transition metal dichalcogenides (TMDs) can be used to efficiently suppress the "short-channel effects" in the field effect transistor. Thus, it is considered to be one of the candidates to extend Moore's law. However, interface effect is the key limit for the further improvement of properties for 2D TMDs based device due to the sensitivity to the environment of this new material. In order to overcome this problem, the graphene heterostructures are used to modulate the interfacial properties of 2D TMDs based device in our study. The main research contents are as follows: 1、utilizing graphene oxide / 2D TMDs、graphene / 2D TMDs heterostructures to modulate the properties of interface in channel and contact region, respectively；2、understanding the mechanism of reducing the scattering and trap effect on the carrier mobility benefiting from the graphene oxide layer in channel region; 3、understanding the mechanism of Fermi level depinning in metal/2D TMDs Schottky junction benefiting from the graphene layer in contact region. This study paves the way to obtain the higher carrier mobility and lower contact resistance in 2D TMDs based devices for the logic integrated circuits, flexible electronics and photoelectric detectors.