高迁移率二维半导体因其独特的结构和性质，可有效抑制短沟道效应，被认为是替代半导体硅，构筑“后摩尔时代”新型晶体管的理想沟道材料之一。在实际器件应用中，要求二维半导体沟道材料除了拥有超高迁移率和大带隙之外，还需具备环境稳定性好，材料制备简单的特点。但是，现有二维材料体系（石墨烯、拓扑绝缘体、过渡金属硫族化合物、黑磷、等等）无法同时满足上述四点要求。针对这一问题和实际应用需求，本项目旨在通过材料的理性设计，开发同时满足超高迁移率、合适带隙、环境稳定性、可批量制备的全新的二维半导体材料体系，建立高品质材料的可控制备和批量生长方法，研究和调控其独特的表界面行为，构筑高性能电子器件，并探索基本物理化学性质和效应。本项目的实施有希望开发在纳电子和光电子领域带来变革的材料，具有重要的基础科学意义和实际应用价值。

Ultrahigh-mobility semiconducting ultrathin films form the basis of modern electronics and may lead to the scalable fabrication of highly-performing devices in post-silicon integrated circuits. Since the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional (2D) materials with both high carrier mobility and large electronic bandgap is a pivotal goal of fundamental research. However, to date, 2D semiconducting materials with high-mobility, sizable band-gap, environmental stability and easy accessibility to large-scale production remain elusive. In this proposal, we are going to identify new air-stable 2D materials with both superior mobility and large band gaps by rationally theoretical design, and develop facile approaches to synthesize high-quality 2D crystals at a large scale. In addition, 2D semiconductors would be fabricated into high-performance functional devices with well-controlled regulation of the unique surface/interface behavior. The exploitation of air-stable ultrahigh-mobility semiconducting 2D materials would hold great promise in the fundamental discovery of new physics and new effects as well as practical applications in electronics, photonics, optoelectronics and energy sciences.