伽马射线探测器作为PET-CT，宇宙射线能谱仪，核安全检测系统的核心器件，将高能伽马光子转换为电学信号进行采集。钙钛矿单晶（MAPbX3，MA=CH3NH3, X= Br，I）由于其含有重元素，较高的载流子迁移率-寿命积，通过低廉的溶液法获得大尺寸晶体等优势被认为是一种新型非制冷型伽马射线探测的半导体材料。然而光电导型钙钛矿伽马射线探测器由于受到钙钛矿晶体的缺陷和电阻率等因素限制，具有暗态电流大，噪声高，能量分辨率不足等问题。本项目中，拟采用外延生长-掺杂形成钙钛矿晶体PIN结构建伽马射线探测器。利用外延生长的低缺陷界面和掺杂调控晶体内部的多子种类与浓度实现器件晶格匹配、能带匹配的γ射线PIN管。本项目通过在厘米厚度的本征MAPbBr2.5Cl0.5钙钛矿单晶的两面分别外延生长P型和N型钙钛矿单晶实现PIN结构，降低暗态电流，抑制探测噪声，提高能量分辨率，通过阵列实现伽马射线成像。

γ-ray detector is used as the core device in PET-CT, cosmic ray energy spectrum, nuclear safety and other systems to convert high-energy γ photons into electrical signals for collection. The advantages of perovskite single crystals (MAPbX3, MA = CH3NH3, X = Br, I) because they contain heavy elements, high carrier mobility-lifetime products, and large-size crystals obtained by inexpensive solution methods as a new type of semiconductor material for uncooled gamma-ray detection. However, the photoconductor structure of perovskite ray detector is limited by the defects of perovskite crystals and resistivity, and has the problems of large dark current, high noise, and limited energy resolution. In this project, it is planned to use epitaxial growth-doping to form a perovskite crystal PIN structure to build a γ-ray detector. Utilizing the low-defect interface grown epitaxially and doping to control the multi-subtype and concentration inside the crystal to realize the device lattice matching and energy band matching of the γ-ray PIN diode. This project realizes the PIN structure by epitaxially growing P-type and N-type perovskite single crystals on both sides of the intrinsic MAPbBr2.5Cl0.5 perovskite single crystal with a thickness of centimeters. It will realize low dark current, low noise and remarkable energy resolution γ-ray detector.