AlGaN基紫外LED是未来替代汞灯等传统紫外光源的理想光源。垂直结构紫外LED因具有散热能力好、光提取效率高、设计灵活和易于集成等诸多优势，是提升器件发光效率和推进应用的重要研究方向，但面临剥离衬底的核心技术难题。. 本项目拟研究基于AlGaN纳米多孔牺牲层的新型衬底剥离和深紫外LED制备技术：(1)探索三元合金AlGaN的电化学腐蚀机制，实现纳米多孔模板的可控制备；(2)掌握纳米多孔牺牲层的高温形态、机械性能演变规律；(3)研究无序纳米结构上高Al组分AlGaN材料的MOCVD生长动力学，揭示AlGaN侧向外延中的应力弛豫和位错湮灭机制；(4)打通垂直结构深紫外LED的工艺流程，结合光子传输行为仿真，最终研制出高功率、可靠的AlGaN基垂直结构深紫外LED。. 本项目有望形成自主知识产权，推动紫外LED快速发展，为其全面进入紫外光源应用市场奠定基础。

AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) is considered as the mainstream of the further UV light source to replace mercury vapor lamps. Vertical AlGaN DUV LEDs have many advantages on heat dissipation, light extraction efficiency, current spread design flexibility and integration, which have been thought to be a very promising route toward emission efficiency enhancement and application extension. The involved key technique for vertical devices is the lift-off of substrates.. In this project, we propose to develop a novel lift-off method using a nanoporous sacrificial layer for vertical AlGaN DUV LED fabrication. Detailed research contents are as follows: (1) Understanding the electrochemical etching mechanism of the ternary alloy AlGaN, and realize controllable fabrication of nanoporous template; (2) Master the shape and mechanical performance transformation of the nanoporous template during high-temperature annealing; (3) Investigate the growth kinetics of Al-rich AlGaN on unordered nanoporous template and present the stress relaxation and the annihilation mechanism of dislocations; (4) Develop the whole processing flow for vertical DUV LEDs, and achieve efficient and reliable vertical AlGaN DUV LEDs with the photon transportation behavior study.. We expect to posses independent intellectual property rights, promote the rapid development of DUV LEDs, and establish the basis for UV LEDs entering into the UV sources market.