复杂工况下功率半导体器件多时间尺度热行为研究

面向电力电子系统的可靠性研究，目前正逐步转向基于故障机理的分析方法。如何将变流器的运行工况与设计参数，准确地翻译为功率半导体器件的动态热行为，是理解器件热应力及过温机理，从而提高变流器系统可靠性的重要研究基础。.本申请项目将聚焦功率半导体器件动态热行为的建模、分析与应用；将从多时间尺度角度出发，与变流器复杂工况相结合，探索和功率器件热应力相关的新型模型，扰动机理，主动控制，实验方法等基础研究问题，从而奠定电力电子系统可靠性评估及改进的理论基础。具体研究内容包括1）包含散热器及多芯片特性的功率半导体器件频域热阻抗建模。2）建立变流器多时间尺度运行工况与功率半导体器件热行为之间的数学联系。3）探索变流器主动热应力控制的可行方案、设计方法以及控制效果。 4）搭建适用于电力电子器件热行为研究的新型实验平台。

The reliability research for the power electronics system with complex mission profiles is now moving towards the approaches based on failure mechanisms. The proper translation from mission profiles and converter design to the thermal behaviors of power semiconductor devices, is essential for understanding the thermal stress or overheat symptoms of power devices, thus for enhancing the reliability performance of converters. .This project proposal focuses on the modelling, analysis and re-shaping for thermal behaviors in power semiconductor devices. This research is a foundation of reliability evaluation and enhancement of power electronics system. The applicants will try to explore the new models, disturbing mechanisms, active controls and experimental methods that are related to the thermal stress of power devices. The complex mission profiles of converter, and multi-timescale characteristics will be also taken into account. The content of this proposal is composed of: 1) Frequency-domain thermal impedance modelling of IGBT modules including the heat sink. 2)The mathematical correlation between the mission profiles of converter and thermal behaviors of power device. 3) The feasible solutions, design methods, and effects of active thermal control of power electronics converter. 4) Building the new experiment platforms for the analysis of thermal behaviors in power semiconductor devices.