Statistical Characterization for Loss Distributions of Power Semiconductor Devices
Statistical Characterization for Loss Distributions of Power Semiconductor Devices
复制标题
功率半导体器件损耗分布的统计特征
DOI：
10.1109/tpel.2020.3045033
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发表时间：
2021-07
影响因子：
6.7
通讯作者：
Zhu Ye
中科院分区：
文献类型：
--
作者：
Ma Ke;Lin Jiayang;Zhu Ye
功率半导体器件的先进损耗特性对于电力电子系统的可靠性评估和改进至关重要。本文提出了一种基于H桥测试电路的功率半导体器件开关能量和通态电压统计分布的测试方法。该方法包括为多个被测器件专门设计的测试序列，以及损耗相关特性的统计表示。该方法可以对多个晶体管和续流二极管的损耗相关特性进行多次评估，测试条件比传统的双脉冲测试更接近实际使用中器件的工作条件。基于实验结果，进一步得到了开关能量和通态电压的概率密度函数，从而能够更准确地预测功率半导体器件的热性能和可靠性性能。
Advanced loss characterizations of power semiconductor devices are becoming crucial for the reliability evaluation and improvement of power electronics systems. In this letter, a method based on an H-bridge testing circuit is proposed to reveal the statistical distribution of switching energy and on-state voltage of power semiconductor devices. This method includes a specially designed testing sequence for multiple devices under test, as well as the statistical representation of loss-related characteristics. By the proposed method, the loss-related characteristics of multiple transistors and freewheeling diodes can be evaluated in multiple times, and the testing conditions are closer to the working conditions of devices in practical use compared to the conventional double-pulse test. Based on the experimental results, the probability density function for the switching energy and on-state voltage can be further generated, which enables more correct prediction for the thermal and reliability performances of power semiconductor devices.
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影响因子：
6.7
作者：
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通讯作者：
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DOI：
10.1109/icmap.2013.6733508
发表时间：
2013-12
期刊：
2013 International Conference on Microwave and Photonics (ICMAP)
影响因子：
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作者：
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DOI：
10.1109/tdmr.2015.2429792
发表时间：
2015-05
影响因子：
2
作者：
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通讯作者：
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