压电半导体纳米结构具有优良的压电性和半导体特性，在新型多功能器件方面有巨大应用前景。本项目拟针对压电半导体纳米结构，基于非线性力电耦合变形理论，考虑挠曲电效应，构建静态有限偏场作用下变形-极化-载流子耦合的偏场理论，系统建立适用于压电半导体纳米结构分析的一维和二维简化结构理论。在此基础上，针对拉伸、扭转、剪切和弯曲等单一及其耦合变形模式，深入研究纳米尺度的压电半导体杆、梁、薄膜、板和壳等典型结构的波动与振动特性；考察偏场、挠曲电性、压电效应和边界条件等对压电半导体结构波动/振动特性和载流子输运性能的影响，探索有效调控压电半导体结构动力学特性和载流子输运性能的主动方法，为新型功能器件的设计和应用提供理论支撑。

Piezoelectric semiconductor (PS) nanostructures simultaneously possess piezoelectric and semiconductor properties and have a huge potential application in the field of multi-functional electronic devices. Firstly, the project, taking flexoelectricity into account, establishes three-dimensional equations for small dynamical field superposed on a finite static bias for PS nanostructures based a nonlinear deformation theory of electroelasticity, and then develops systematically simplifying structural theories for PS nanostructures . Secondly, wave propagations and vibration characteristics in PS-rods/beams/films/plates/shells with purely extensional, torsional, flexural and shear deformations and their coupling forms, are studied in depth using the established theory. Then, the project investigates the influence of the biasing field, piezoelectric effect, and boundary conditions on dynamical characteristics of PS structures. Finally, some effective methods of controlling/tuning PS structural dynamical characteristics and the charge-carrier transport are proposed. The project lays a solid theoretical foundation for applications of PS structures in multi-functional devices.