二维锡烯薄膜的实验研究

利用分子束外延技术，本项目计划研究如何在合适的单晶基底上（以Bi2Te3(111)为代表）实现高质量的基于灰锡（金刚石结构锡）的类石墨烯结构二维锡烯薄膜生长。通过角分辨光电子能谱和扫描隧道显微镜研究外延锡烯薄膜的电子结构和原子结构，最终确定其稳定的晶体结构和能带结构。并进一步通过调节晶格常数和表面吸附的方法，实现对外延锡烯薄膜电子结构的调控。利用实空间低温扫描隧道谱结合动量空间能带结构测量研究外延锡烯薄膜的拓扑特性及其变化。对外延锡烯薄膜开展原位和非原位基本电输运性质研究。

Using molecular beam epitaxy technique, this project plans to study the growth of high-quality two dimensional stanene films with similar crystal structure as graphene on suitable substrate (such as Bi2Te3(111)). The electronic and atomic structures of the epitaxial stanene films will be studied by angle-resolved photoemission spectroscopy and scanning tunneling microscopy. We try to determine the mostly stable atomic structures of epitaxial stanene and its corresponding band structures. Furthermore, we plan to modify its electronic structures by changing the lattice constant and surface adsorption. The topological properties of epitaxial stanene films will be explored by combining low temperature scanning tunneling spectroscopy in real space and band structures measurements in momentum space. We also plan to study its basic electric transport properties using in situ and ex situ methods.