Ag基p面反射镜制备是GaN基大功率LED芯片制造的关键技术。优良的Ag基p面反射镜，需同时具备力、热、光、电四方面的综合性能：强附着力、高热稳定性、(超)高反射率，低接触电阻。如何制备同时具备以上四点的Ag基p面反射镜是当今高端LED照明技术中迫切需要解决的难题之一。本项目拟首先研究含Ni的Ag基反射镜与p-GaN表面之间的协同关系，通过设计反射镜的结构，改变Ni的位置及厚度，调控p-GaN的表面状态；通过SIMS、XPS等测试手段获得界面态、界面能级、界面元素分布等关键信息，以确定Ni在界面以何种形式存在及其对欧姆接触形成的作用机理。在此基础上提出“牺牲Ni处理”芯片工艺方法并与外延生长技术相结合，对p-GaN进行表面改性，最终实现具有良好附着力、高热稳定性、低接触电阻及超高反射率的纯Ag反射镜，避免常规含Ni的Ag基反射镜中Ni对Ag反射率的影响，从而提高大功率LED芯片的发光效率。

The preparation of Ag-based reflector is the key of GaN-based high-power LED chip manufacturing technology. Excellent mirror should be equipped with four sorts of comprehensive performances which are great adhesion force, high thermal stability, (ultra) high reflectivity and low contact resistance. The preparation of Ag-based mirror with above four characteristics is one of the urgent problems in today’s high-end LED lighting technology. This project first aims to study the collaborative relationship between Ag-based mirror containing Ni and p-GaN surface modification through the structure design of reflector, which can be explored by changing the position and thickness of Ni in the reflector structure, by regulating the surface state of p-GaN. For determinating what form of Ni in the interface and the ohmic contact formation mechanism, we try to obtain some key information, such as interface state, interface energy level and interface elements distribution which can be obtained through SIMS, XPS etc. On above basis, we propose Ni-assisted surface treatment method combined with epitaxial growth technology, to modify the surface of p-GaN, which of the aim is to acquire the pure Ag mirror. The pure Ag mirror with great adhesion force, high thermal stability, ultra high reflectivity and low contact resistance is able to avoid the reflectivity loss from Ni layer and improve the luminous efficiency of high power LED.