ZnO基稀磁半导体(Diluted magnetic semiconductors DMSs)具有优异的磁、磁光、磁电性能，是破解后摩尔时代难题的重要候选材料之一。然而ZnO基DMSs的室温铁磁性起源与载流子浓度和类型的关系这一科学问题仍未明确，ZnO基DMSs光电性能可调的器件也进展缓慢。基于这一科学问题，本项目拟采用BiFeO3铁电界面剩余极化的实验方法来调控ZnO基DMSs的载流子行为，并结合同步辐射光电子能谱、X射线掠入射衍射(GID)、掠入射X射线散射(GIXS)等实验技术，研究ZnO: TM (TM=Co, Mn)薄膜界面电荷的注入过程，最后结合理论分析揭示ZnO基DMSs磁性起源的微观机制，并在此基础上制备功能可调的自旋电子器件。本项目将采用一种新的实验方法来研究ZnO基DMSs的磁性起源机制，为ZnO基DMSs多功能电子器件的应用提供理论与实验依据。

ZnO based Diluted magnetic semiconductors (DMSs) have excellent magnetic, magneto-optical, and magnetoelectric properties, and are one of the important candidate materials to solve the problems of the post-Moore era. However, the scientific problem of the relationship between the room temperature ferromagnetic origination and the carrier concentration of ZnO-based DMSs has not been solved, and the devices with adjustable photoelectric properties of ZnO-based DMSs are also progressing slowly. Based on this scientific problem, this project proposes an experimental method that directly uses the remnant polarization of BiFeO3 ferroelectric to affect the interface carrier behavior of ZnO-based DMSs, combined with synchrotron radiation photoelectron spectroscopy and X-ray grazing incidence diffraction ( GID), grazing incidence X-ray scattering (GIXS) and other experimental techniques to study the interface charge injection process of ZnO: TM (TM = Co, Mn) film, and finally combined with theoretical analysis to reveal the microscopic mechanism of the magnetic origination of ZnO-based DMSs, and based on this research to prepare the spintronic devices with adjustable performance. This project will implement a new experimental method to study the magnetic origin mechanism of ZnO-based DMSs, and provide theoretical and experimental basis for the application of ZnO-based DMSs multifunctional electronic devices.