高品质GaSb、GaAsSb纳米线在Si上分子束外延定向生长

半导体纳米线赋予传统的半导体材料新的生机，被认为是可以延续微电子学发展步伐的重要材料。作为一种独特的近窄禁带半导体，GaSb是一种重要的光电材料，在p型高速电子器件中有潜在的应用价值。本项目拟通过分子束外延技术在Si(111)衬底上外延定向生长Ga液滴催化的高品质GaSb半导体纳米线及As组分在0-100%内完全可调控的GaAsSb三元化合物半导体纳米线；对其形貌与结构特征、光学与电学性质等进行表征；研究GaAsSb纳米线组分对其材料性质与电子能带结构的影响；探索研制以GaSb纳米线为沟道的场效应晶体管。通过可控的纳米线生长工艺，结合结构表征和性能测量手段，获得GaSb以及GaAsSb纳米线的制备条件与结构、物理性质和器件性能之间的关系，最终达到可以调控制备GaSb和GaAsSb纳米线的程度，以便得到所需要的器件参数，为基于GaSb和GaAsSb纳米线的高性能器件提供物理原理和技术指导。

Semiconductor nanowires are regarded as a kind of important material to continue the remarkable successes of traditional microelectronics. As a near narrow band-gap semiconductor, GaSb is an important optoelectronic material and has potential applications in p-type high speed electronic devices. This project aims at the fabrication of unidirectional, high-quality, Ga-catalyzed GaSb semiconductor nanowires and GaAsSb ternary compound semiconductor nanowires over the entire As compositional range (0-100%) using molecular beam epitaxy. A comprehensive characterization will be performed for these nanowires including the morphological, structural, optical and electrical properties. We also plan to investigate the compositional influence of the GaAsSb on the material properties and electronic structures and explore the performance of the field-effective transistor with GaSb nanowire as the channel material. Through the controllable fabrication process for GaSb and GaAsSb nanowires along with the characterizations and measurements, we attempt to obtain the connection between preparation condition, structure, physical properties and device performance. It is expected to be helpful for the rational synthesis of GaSb and GaAsSb nanowires, providing a physical and technical guidance for future GaSb - and GaAsSb - based high-performance devices.