控制分子有序排列，是提高有机薄膜晶体管（OTFT）性能的关键方法。本项目利用自组装、表面化学增长的办法在Si/SiO2衬底上制备porphyrin（MPS4）单分子层，其大环平面平行于衬底表面；利用其高度共轭的平面结构对有机分子（CuPc或pentacene）强的π-π相互作用力，使得沉积在上面的有机材料按照face-on方式有序排列；同时，porphyrin（MPS4）单分子层提供低成核密度，有利于大颗粒有机材料的形成。所制备p-type OTFT器件具有优越的场效应迁移率、开关电流比；利用不同配位中心金属离子对porphyrin环平面电子分布的影响来降低电极接触电阻，从而降低器件开路电压。本项目将首次实现按照face-on排列方式生长的有机薄膜，并且研究分子face-on有序排列对器件性能的影响。该项目实施既既具有科学研究的意义，又具有实现OTFT高性能的现实意义。

Molecular arrangement is crucial for molecular orbital overlapping, carrier density, carrier mobility in the organic semiconductor materials. The growth of high-quality organic semiconductor thin films with a high order, low defect and large size domain is required to realize high-performance organic thin film transistor (OTFT).This project aims to prepare a face-on arranged and large-size organic thin film (CuPc or pentacene) above a monomolecular layer of porphyrin （MPS4）chemically binding to a self-assembled monolayer of maleimide organosilane through self assembly method and subsequent surface chemical growth method on the substrate of Si/SiO2.The flat-lying monomolecular layer of porphyrin（MPS4）induces the face-on arrangement of organic molecules due to the strong π-π interaction. By incorporating a suitable coordinate metal ion to modify electron distribution of porphyrin ring plane the contact resistance is to be improved. P-type OTFT device with the structure of Si/SiO2 (Gate)/organosilane SAM/monomolecular layer of porpyrine //CuPc or pentacene//Au (Source and Drain) presents a high carrier mobility and on/off ratio, and a low threshold voltage. For the first time the project deeply studies the influence of face-on arrangement of organic material on the property of OTFT device in the scientific research and industrial application.