AM-OLED是平板显示未来的主流,TFT基板是核心。氧化物TFT由于它低成本绿色等优势是即将取代现有的TFT背板技术。而其稳定性是目前阻碍其应用的关键。本项目以氧化物TFT的稳定性为重点。研究正负偏压不稳定性，偏压光照不稳定性，特别是负偏压光照不稳定性等现象，通过各种物理测试、分析其机理及提高稳定性的对策。1) 对于有源层：添加IV族元素减少氧空位减少带间能级及探索新结构和组分的有源层 2）采用ALD等方法研制Al2O3等高介电常数，高绝缘强度绝缘层3）有源层与-绝缘层的界面：用C-V 方法研究其界面，通过加入薄的缓冲层以及各种界面处理来，减少界面缺陷，改善界面。4）封装：对底栅结构，使用etching stopper 及抗水抗氧的钝化层对有源层进行全封闭。研制顶栅结构，有利稳定性。最终研制出性能稳定的有实用价值的2-3英寸单色氧化物TFT-OLED显示屏及其关键工艺。

AM-OLED is the mainstream of flat panel display. The thin film transistor (TFT) backplane is the core of AM-OLED. Oxide TFT is a promise backplane for OLED Due to its better performances, lower cost, green process. In this project, we put the emphases on the stability of Oxide TFT. The device stability is sensitive to bias/current stress, temperature, light illuminating, and water vapor exposure. We will study Bias voltage stress induced instability (the shift of threshold voltage) without light illumination or under light illumination, especially, Negative Bias- light illumination instability: Investigate the dependences of the shift of threshold voltage on the stress time, stress temperature, intensity and wavelength of light illumination , further analyze the mechanism for the instability and adopt the corresponding measures to improve the stability. 1) For channel layer, to incorporate tetravalent elements (Hf4+, Cr4+, Si4+) ,which have high metal-oxygen bonding-strength, into the IZO system can strongly bond with oxygen, resulting in the reduction of oxygen vacancy, which acts as the subgap hole traps, leading to improvement of stability. 2) Fabricate the high K insulator layer with high insulation strength by using Atomic Layer Deposition (ALD) method, such as Al2O3, instead of PECVD. ALD method is particularly suitable for preparing high k material, since it can grow dense thin film and have no H+ suspend bond, which is favor to stability. 3) Improve the interface between channel layer and insulator. Study the interface by using capacitance-voltage method. In order to reducing the defect and traps in the interface and modified the interface, we will adopt the steps, including annealing in wet oxygen , which has stronger oxidation power provided by H2O; plasma treatment in the various atmosphere : and inset a thin buffer layer (HfO2) to modify interface. 4) Passivation: For the bottom gate TFT, the instability can produce from the exposed back channel due to the water vapor, it may be avoided by adopting dense, gas-tight passivation layers and etching stopper to seal the all device. The alternative is to make Top gate TFT, where the channel layer is covered by the insulator layer, acts like a passivation layer. At last, we will complete a 2-3 inch mono-color with resolution 160x120 display prototype.