对自旋电子学实际应用来说，其中一个主要挑战是在室温下如何有效地创建具有相同的电子自旋的半导体，自旋过滤器是实现自旋电子学这一应用的一个重要环节。基于非磁性半导体GaNAs体系缺陷调控的新型自旋过滤器可以有效的在室温无外磁场的条件下工作。这种自旋过滤器利用深能级缺陷电子自旋依赖复合（Spin dependent recombination, SDR）过程，可以在室温下得到较长时间的导带电子自旋寿命。本项目主要目的是利用理论计算结合与光学取向实验， 光探测磁共振和光探测电核双共振实验，Hanle效应谱以及自旋依赖的光电流谱等实验手段更深入的研究GaNAs材料中自旋依赖复合缺陷的结构和物理特性，为未来自旋电子学器件的可能实际应用奠定基础。

A major challenge for spintronics application is that room temperature effective to create electrons in the spin of a semiconductor, usually having the same number of spin up and spin down-electrons. Spin filter only allows the electrons with the desired spin direction and separate the others. A new type of defect engineered spin filter was discovered in non-magnetic semiconductor GaNAs.This type of spin filter making use of spin dependent recombination of the electron of deep defects, can work at room temperature without external magnetic fields.The main aim of this proposal is to investigate the physical and structual properties of this new type spin filter by combining theretical calculation with optical detected magnetic resonance(ODMR), optical detected electron nuclear dual resonance (ODENDOR),optical orientation, Hanle effect measurement and spin dependent photo conductivity technique.etc. Deep understanding of the physical properties is essential for fulture spintronic application.