溶液法由于其制造成本低，技术简单，无需真空设备等优点，已成为未来制造氧化物薄膜晶体管（TFT）的新型技术之一。因而研究溶液法制备具有环境友善（无铟）有源层的TFT，对于推动其实用化及产业化具有深远的意义。本项目采用溶液法制备WO3作为栅绝缘层/有源层界面修饰层（同元界面修饰，与有源层WSnZnO具有相同的元素）的WSnZnO氧化物 TFT。在溶液法烧结成膜中引入水蒸气辅助成膜降低薄膜的缺陷，研究高价态W在WSnZnO薄膜中的作用，制备功能梯度栅极绝缘层薄膜材料。研究同元界面修饰层WO3中W在WSnZnO的扩散分布规律，建立W分布与界面缺陷的关系，从而制备性能良好的氧化物TFT。通过C-V测试及原位Hall测试分析器件在偏压、辐照以及热场长时间应力作用下体缺陷态及界面缺陷态演变规律，从而揭示器件的稳定性机制。本项目的实施，不仅利于突破溶液法氧化物TFT的理论，也将为其实用化奠定基础。

With its low cost, simple technology and being free of vacuum system, solution-process has become one of fabrication technologies for oxide thin film transistors in the future. It is of far-reaching significance to promote practical application and industrialization to manufacture the environment-friendly (indium-free) TFTs with low power consumption ( high-k insulator ) by solution technique. .Taking the indium-free WSnZnO as active layer, this project uses WO3 as interface modification layer to fabricate TFTs by solution method. WO3 has the same element W with WZnSnO films which may be useful to decrease defect atoms and carrier scattering center of interface element diffusion into active layer. In this project, the WSnZnO films will be prepared by steam-aided combustion technology, the role of high valence W will be deeply investigated, and the mechanism of suppression O-H bond in WSnZnO films will be explained and revealed systematically. Meanwhile, composite material with the properties of high-k and high-Eg will be designed and utilized as the gate insulator TFT. .This project mainly studies the influence of interface modification layer WO3 on the device performance. The effect of preparing process of WO3 on W diffusion in WSnZnO films will be studied by SIMS, XPS and C-V measurement. The relation between W distribution and interface defect state will be established. TFT device with excellent property can be prepared by the optimal process condition. Stability mechanism of TFT devices under the voltage bias, illumination and temperature stress will be discussed and revealed by C-V testing and in-situ Hall measurement. .The implementation of this project is not only helpful to discover the relative theory of TFT prepared by solution method, but also contribute to the practical application.