在锑基III-V族化合物纳米线的制备过程中极易出现随机分布的孪晶面或堆垛层错，导致目标产物中出现多晶以及其他不可控的晶体结构，这使得材料的电子能带结构与其本征光学带隙值产生较大差异，同时增大的电阻率阻碍了载流子的输运，这显然对其构筑的电子器件的后续应用极为不利。针对这一问题，本项目以锑化镓、锑化铝等具有潜在应用价值的锑基III-V族化合物纳米线作为目标产物，选取活性相当的金属前驱源，在一定的溶剂存在条件下，通过改变金属前驱源的用量、反应温度以及配位剂种类等反应参数，调控液相反应体系中晶体生长界面的热力学与动力学因素，从而控制目标产物中孪晶面和堆垛层错呈周期性分布形成孪晶超格子结构；并研究锑基III-V族化合物纳米线中与孪晶超格子结构密切相关的电学性质，为构筑性能优越的纳米线电子器件提供技术支撑与理论指导。

During the preparation of Sb-based III-V compound nanowires, the often occurred randomly distributed twin defects and stacking faults result in a polytypic, or other uncontrolled crystal structure, which have been shown to modify the electronic band structure leading to significant discrepancies in optical band gap values and exhibit higher resistivity that is detrimental to carrier transport with enormous disadvantages for future nanowire-based electronic device applications. To solve this question, a notion was built for preparing the AlSb and GaSb etal with potential applications in many fields as the target Sb-based III-V compound nanowires, which will be carried out in certain solvents with effective metal sources with equivalent reactivity. By selectively tuning the reaction parameters including the amounts of metal sources, reaction temperature and the type of coordination agents, which can be shown to controlthe thermodynamics and kinetics of the growth interface of crystal based on the solution reaction system, leading to fabricating highly reproducible twin defects and stacking faults to form the twinning superlattices. Furthermore, studying the relationship between the electronic properties and the twinning superlattices structure in the Sb-based III-V compound nanowires, which is expected to provide theoretical and technical support for the fabrication of nanowire-based electronic devices with excellent properties.