锑基化合物Sb2(S,Se)3由于具有所含元素储量丰富、环境友好、性能稳定等特点，被认为是一类极具发展前景的新型光伏材料，目前已实现～10%的光电转换效率，进一步提高其效率有望推向实际应用。本项目针对Sb2(S,Se)3电池效率提升方面的关键问题，围绕Sb2(S,Se)3薄膜的带隙设计、可控制备和器件性能优化，从三个层次开展应用基础研究：（1）发展能够实现V型梯度带隙的新型热注入沉积法和多源气相输运沉积法，提高光生载流子分离、传输及收集效率；（2）通过深能级缺陷表征，阐明深缺陷的类型、分布和浓度，从材料生长的角度调控其缺陷；（3）通过界面化学结构和电子结构的深入研究，优化其界面性质及器件性能。本项目的成功实施，可望加深对Sb2(S,Se)3材料基本光电特性的理解，预期实现15%以上的器件效率，为大面积光伏器件制作奠定效率基础、为包括安徽省在内的光伏产业升级提供支撑。

Antimony based semiconductor Sb2(S,Se)3 is featured as earth-abundant, environmental friendly, and stable, thus regarded as promising light harvesting material for practical applications. Solar cell based on Sb2(S,Se)3 has reached 10% power conversion efficiency. Nontheless, for practical applications, the efficiency requires further improvement. This proposal focuses on the critical problems associated with the efficiency improvement, we will conduct study about the gradient band gap design, controllable synthesis as well as device optimizations. There are three tasks in the proposed research. (1) Development of hot injection deposition method and multisource vapor transport deposition method for the fabrication Sb2(S,Se)3 thin film of with “V” shaped band gap structure, aiming at enhancing the carrier collection efficiency. (2) Taking advantage of defect characterizations, we will identify the defect state, distribution and concentration, followed by tuning the defect via controlling the film growth. (3) On the ground of the investigations on chemical structure and electronic structure of the interfaces, we will optimize the interfacial properties. The target of this research is to achieve 15% power conversion efficiency in Sb2(S,Se)3 solar cells. This study will provide insightful understanding regarding the basic photovoltaic properties of Sb2(S,Se)3, set ground for large area production of Sb2(S,Se)3 solar cells, and facilitate the development of new energy industry of Anhui province and others.