无机钙钛矿光晶体管结构的高响应度紫外探测器件研究

本项目以提高紫外探测响应度为目的，将CsPbX3薄膜和量子点有机结合，提出一种新型同质结构的光晶体管紫外探测器。将CsPbX3量子点掺入薄膜晶体管的有机栅绝缘层内作为紫外光感应窗口，并以相同材料的CsPbX3薄膜为有源层，使量子点的高量子效率特性和薄膜的高载流子迁移率特性得到综合体现。通过晶体管三极调控作用，使感应出的光生载流子快速分离，实现紫外信号的探测与电信号读取、放大的集成，实现高响应度的紫外探测。本项目重点调控CsPbX3量子点、薄膜的材料组分与微观结构，建立高响应度紫外探测的材料体系；基于对掺杂量子点栅绝缘层的电容效应和同质结构中载流子注入效应的研究，研究界面效应对载流子输运过程的影响，建立载流子的输运模型，得到紫外探测实现高响应度的机理。本项目研究溶液法低温制备光晶体管探测器的关键工艺，制备原型器件，并为紫外探测器件的柔性化奠定基础。

A novelphototransitorarchitectures UV photodetector is proposed to improve responsivity with the homogenousall-inorganic perovskitesstructure in which its quantum dots are combined with film. In this transistor,CsPbX3 quantum dots (CsPbX3 -QDs) are doped into the organic gate insulator as the photoactive sensing window for UV light andCsPbX3film (CsPbX3 -Film) with the same material as the active transmission layer. It comprehensively embodies the high external quantum efficiency of quantum dots and high mobility of carriers for the film.By the control function of three electrodes of the transistor, the photo-induced carries arefastseparated to realize the integration of UV light detected and reading out and amplification of corresponding electric signal. The UV photodetector with high responsivity is realized.By regulate and control the material component and microstructure of CsPbX3-QDsand CsPbX3-Film, the material system will be built with high responsivity for UV detecting.Base on the researchof the capacitance effect of the organic gate insulator doped CsPbX3-QDs and carriers injecting effect for the CsPbX3homogeneous structure, the influence of interface effects on the carrier transport process is investigated and the transport model of the carriers is set up. The mechanismof the UV photodetector with high resposivity is achieved. It is researched for the key technique to prepare the prototype phototransistor with solution-processedand low temperature technique. The prototype of this device will be prepared which will be the foundation for flexible UV detectors preparation.