窄带硒碲化合物半导体低维纳米结构的控制制备、机理与性能研究

本申请旨在发展和建立一种新颖温和的窄带化合物半导体的合成与制备方法，侧重研究硒碲等窄带化合物半导体的控制合成及其控制合成原理与规律，并从生长动力学角度研究和探明该类硒碲等窄带化合物半导体低维纳米结构的生长过程和生长机理，实现硒碲等窄带化合物半导体低维纳米结构的可控制备与生长。同时研究和分析所制备的硒碲等窄带化合物半导体低维纳米结构的组成、结构、微结构、表面/界面结构和物化性质，并侧重研究其光电响应和光电探测等能量转换相关性能，探明其组成、结构与其性能间的内在关系与规律，为窄带化合物半导体的控制生长、性能拓展以及其快速光电探测性能应用提供可能的基础。

This project is devoted to develop a new synthetic method for the preparation of low-dimensional narrow bandgap compound semiconductor nanostructures under mild conditions, in which the low-dimensional nanostructures of the chalcogenides mainly the narrow bandgap selenides and tellurides can be controllably fabricated and their structures and microstructures can be selectively determined through the variation of reaction conditions in addition to the employment of molecular precursors with functional groups and templating effects selected in the process. Meanwhile, the reaction mechanism of the developed reactions to the compounds and the growth mechanism for the low-dimensional nanostructures will be revealed in this proposal. And also, the as-prepared nanostructures will be further characterized by various techniques including varied-temperature XRD, SEM, TEM, in-situ HRTEM, SAED, EDX, Raman, DSC, XPS, FTIR, ATR-FRIR, GC-MS, NMR, EPR, and etc., and the photoresponding and photodetecting properties in addition to some other physical and chemical properties will be also investigated in the project to understand the relations between their varied structures and properties, which will be favorable for the improvement of fundamental nanophysics and nanochemistry and the potential applications of these low-dimensional narrow bandgap compound nanostructures in energy conversion area including the photoresponding and photodetecting ones.