具有宽波段光吸收响应的半导体共振结构在光电功能材料与技术等领域中拥有非常广阔的应用前景，如何构建基于半导体材料且有益于实现高效光电响应的完美光吸收器共振结构是国内外研究者关注的热点之一。本项目拟采用超薄高介电半导体材料，结合金属共振单元，实现宽波段完美光吸收，进而探索其在光电功能材料领域的应用。具体涉及以下研究内容：1)，研究高介电半导体微纳结构的电磁共振特性；2)，设计和分析高介电半导体与高电导金属材料复合结构的光学共振和等离激元共振模式及其杂化耦合方式；3)，修正和完善结构的理论模型，实现“由物及理”的一致性，掌握此类超薄半导体共振结构产生完美光吸收响应的内在物理机制，进一步探索其在光电探测、能源与热电子等领域的潜在应用。

Semiconductor resonators with broadband light absorption are with wide potential applications in the fields such as the optoelectronic functional materials and technology. It is one of the hot areas for the domestic and foreign researchers about the way to build the perfect light absorbers based on the semiconductor materials for efficient photoelectric response. In this project, we are planning to utilize the ultra-thin high-permittivity semiconductor materials and the combined metallic resonators for realizing the broadband perfect light absorption and its further applications in the optoelectronic materials. The main contents include: 1) to study on the electrical and magnetic resonant features for the high-permittivity semiconductor micro/nano-structures; 2) to design and demonstrate the photonic resonances and the plasmonic modes and their hybrid coupling effects for the cooperative structure of the high-permittivity semiconductor and high-conductivity metal materials; 3) to amend and improve the structural model, and finally realize the consistancy from matter to physics, master the intrinsic physical mechanism of the perfect light absorption by the ultra-thin semiconductor resonators and do further exploration for the potential applications on the photoelectric detection, solar energy, the hot electrons and so on.