锗晶圆衬底上高性能超薄MoTe2纳米带晶体管器件构筑与性能研究

由于具有多种室温热力学稳定晶相及拓扑外尔半金属等新奇物性，MoTe2研究自2014年以来呈指数爆炸式增长。本课题聚焦于半导性MoTe2纳米带在集成电路未来技术节点的潜在巨大应用，将新型MoTe2纳米带与传统半导体锗相结合，从提升器件性能关键问题入手，开展锗晶圆上构筑高性能MoTe2纳米带晶体管及性能研究。在前期面上基金Ge基CMOS器件物理与工艺研究基础上，提出锗衬底上均质MoTe2外延生长／宏量转移思路构筑Ge/MoTe2纳米带堆叠结构；在青年基金超薄MoTe2薄膜研究基础上，提出构建金属/金属性1T’/半导性2H-MoTe2以及金属/超薄阻挡层/MoTe2叠层结构改善源/漏电极接触界面、开展铁磁性原子掺杂/结构缺陷/相掺杂/碲金属团簇密度等策略调控MoTe2铁磁性的新思路，提升器件性能。课题实施将为制备兼顾延续“深度摩尔”及发展“超越摩尔”的MoTe2纳米带器件提供理论与技术支持。

Since 2014, MoTe2 has attrached explosive research interests due to its versatile thermodynamically stable strucural polymorphism and exceptional physcial properties such as topological Weyl semimetals. Focusing on its great potential as ideal channel material of future CMOS technology nodes in Integrated Circuit (IC) industry, we propose to construct ultrathin MoTe2 nanoribbon transistor devices on Germanium wafers and maximize the properties aiming to solve the crucial concerns including its compatibility with the current CMOS technology, device performance. Based on our past experience of phase-controllable synthesis, instability, doping and device fabrication of ultrathin MoTe2 film finantially supported by NSFC funding, two strategies including constructing metal electrodes/metallic 1T’/semiconducting 2H-MoTe2 and metal electrodes/ultrathin blocking layer/semiconducting 2H-MoTe2 stacks to improve the source/drain contact interface, and regulating the room temperature ferromagnetic properties by ferromagnetic elements doping, phase incorporation and structural defects adjustment are further proposed. This study will provide both theoretical and technical support on the construction of ultrathin MoTe2 nanoribbion-based electrical element of chips guided by “more moore” and “more than moore” strategies.