中红外宽光谱超辐射发光管以其宽光谱、高功率的特点在大气通信、医疗成像、化学过程监测等诸多应用领域发挥着不可替代的作用。目前，常用的中红外超辐射发光管是利用激光泵浦的氟化物或硫系玻璃，其结构繁杂、转化效率低、造价高，难实现便携化。半导体光源有着体积小、效率高、成本低、易集成等诸多优点。但因受材料自身带隙的限制，难实现高效的中红外波段的光谱输出。本项目申请旨在利用导带内子带间跃迁发光的量子级联结构来制备室温连续工作的高性能的中红外超辐射发光管及器件阵列。此项目将系统地研究结合多种不同发射波长的有源区结构、研究量子阱/点级联外延结构中电子-电子、电子-声子、电子-光子相互作用对不同能级电子态寿命影响，建立有效的载流子注入及抽取机制、提高自发辐射复合效率、获得较宽的材料增益谱，并通过优化器件制备工艺实现室温工作的高性能的中红外宽谱超辐射发光管。

Mid-infrared broadband superluminescent diodes have numerous medical and industrial applications due to their intrinsically low temporal, high spatial coherence and high output power. The traditional mid-infrared light sources are relied on the technique that the light generated by high power laser pumped chalcogenide or fluoride fibers. However such devices are bulky, expensive and complex, which severely impedes their widespread application. Semiconductor light emitters are compact, robust, easy to operate lending themselves to low cost mass production, and therefore are emerged as ideal candidates for medical and industrial applications. In this proposal, the room-temperature broadband semiconductor light sources based on quantum well/dot cascade structures are fabricated and investigated in details. This work will focus on optimizing the epitaxial structure and device fabrication technique to obtain high quality epitaxial materials with long carrier lifetime, high spontaneous emission efficiency, high photon-to-electron conversion efficiency and broadband gain spectra, and the high performance devices.