降低场效应管尺寸被认为是提高电子器件功能和运算速率的有效途径之一，但随之而来的散热和功耗问题将更为突出，成为阻碍微纳电子技术发展的重要瓶颈。利用量子反常霍尔效应(QAHE)边界无耗散的电流研发新型拓扑场效应管，有望解决这一技术难题。众所周知，二维本征磁性拓扑绝缘体是实现QAHE的理想体系，但是如何有效调控QAHE设计出新型拓扑场效应管是急需解决的科学难题。本项目创新性的提出利用电场/铁电衬底调控二维本征磁性拓扑绝缘体磁化方向及其拓扑相变，将有无边缘电流定义为逻辑“1”、“0”态，从而设计出低功耗、高集成度和高速的新型拓扑场效应管。本项目将结合第一性原理与理论模型，从电场/铁电衬底对二维本征磁性拓扑绝缘体晶格、电荷、轨道和自旋四种序参量引起的变化出发，揭示调控其磁化方向及其拓扑相变的物理机制。本项目的研究成果将为实现新型拓扑场效应管的研发提供理论支撑，有助于推动我国低功耗电子信息技术的发展。

Reducing the size of the field effect transistor (FET) is considered to be one of the most effective ways to improve the function and operation rate of electronic devices. However, the issues of heat dissipation and power consumption are becoming increasingly serious, which has become an important bottleneck hindering the development of micro-nano electronic devices. Fortunately, using the edge current of quantum anomalous Hall effect (QAHE) to develop a low-power-consumption topological field effect transistor (TFET) has considered as one promising strategy to solve this scientific problem. Specially, two-dimensional intrinsic magnetic topological insulators are ideal system to realize QAHE. In this project, we propose that throuth the construction of electric filed or ferroelectric substrate, the accurate tunable of magnetization direction and topological phase transitions can be realized. The presence or absence of edge current is defined as logic "1" "0" states, so as to realize a TFET with low-power-consumption, high integration and high speed. Combining the first-principles, Wannier functions, tight binding models and kp effective models, the physical mechanism of topological phase transition can be clearly revealed based on the four order parameters (lattice, charge, orbit and spin) of two-dimensional intrinsic magnetic topological insulators. This present project will provide strong theoretical support for the realization of TFETs, which may also promote the development of electronic devices and information technology in our country.