由于具有出色的材料性能和更低的预期成本，β相氧化镓(β-Ga2O3)引发了新一轮宽禁带半导体技术的研究竞赛。但β-Ga2O3极低的热导率会严重限制其在高频、高功率条件下的应用。一种非常有潜力的解决方案是将β-Ga2O3与高导热的金刚石进行异质集成，但可以实际应用的β-Ga2O3与金刚石的异质集成技术仍然匮乏。本项目拟基于新型表面活化键合技术原位沉积成分可调的极薄纳米中间层，实现β-Ga2O3与金刚石的高强度、低界面热阻室温键合集成。本研究将采用理论、模拟和先进测量相结合的方法对活化表面和键合界面进行分析表征，阐明表面活化过程中的相互作用机理以及界面结构组成对界面性能的影响机制，进而通过调整表面活化能量与时间、纳米中间层成分与厚度等进行界面设计与优化，最终获得高强度、低界面热阻的β-Ga2O3-金刚石键合界面。本研究将为β-Ga2O3器件的热管理提供一个可行的解决方案。

Owing to the excellent material properties and the expected low cost, β-Ga2O3 material has triggered a new round of research competition in wide bandgap semiconductor technology. However, the extremely low thermal conductivity of β-Ga2O3 will severely limit its application in the field of high-frequency, high-power device. A very promising solution is to integrate β-Ga2O3 onto a high thermal conductivity diamond substrate, but the heterogeneous integration technology between β-Ga2O3 and diamond that can be applied in a large scale is still lacking. This project proposes to achieve a robust room-temperature bonding between β-Ga2O3 and diamond by a novel modified room-temperature surface-activated-bonding technique with an in situ deposition of an ultra-thin nano-film with an adjustable composition.In this study, a variety of methods including theory analysis, simulation and advanced measurement will be employed to characterize and analyze the activated surfaces and the bonding interface, clarify the interaction mechanism in the surface activation process and the relationship among interfacial microstructure, composition and properties. Then, according to the above related mechanisms, the bonding interface will be designed and optimized via adjusting the surface-activation energy and time, the composition and thickness of the deposited nano-layer and so on. This research will provide a viable solution for the thermal management of β-Ga2O3 devices.