AlGaAs/GaAs迭层电池研究

批准号:
69976029
项目类别:
面上项目
资助金额:
14.1 万元
负责人:
向贤碧
依托单位:
学科分类:
F0404.半导体电子器件与集成
结题年份:
2002
批准年份:
1999
项目状态:
已结题
项目参与者:
杜文会、袁海荣、高俊华、刁宏伟
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中文摘要
GaAs基系迭层太阳电池可充分吸收各个波段的太阳光,因而可以获得很高的光电转换率。而且由于GaAs基系迭层电池具有抗辐射性能好,耐高温的特点,特别适合于空间应用。近年来国际上GaAs基系迭层电池的研究领域进展十分迅速。申请人拟采用多层生长LPE技术开展AlGaAs/GaAs迭层电池的研究,以求获得很高的转换效率,为我国新一代空间能源打下基础。
英文摘要
AlxGa1-xAs/GaAs tandem cells and GaInP2/GaAs tandem cells were investigated in this fund, main effort was paid for GaInP2/GaAs tandem cells. The advanced MOCVD technique was used in the investigation. The study work includes as follows. Firstly the structure modification of GaInP2 top cell from P+/N type to P+P-/N-N type was performed to increase the short circuit current density of the top cell, secondly the concentration and thickness in each layer of the top cell was adjusted to meet the current match between top cell and bottom cell, in addition the window layer and anti-reflection layers of top cell were investigated by modeling and experiment systematically. All these work resulted in the increase of efficiencies of the tandem cells obviously. The highest efficiency of the GaInP2/GaAs tandem cell reached up to 23.73%(AM0,2x2cm2, 25℃),it is higher than the predicted efficiency of this fund.
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专利列表
AlGaAs/GaAs太阳电池抗辐照效应的研究
- 批准号:69576027
- 项目类别:面上项目
- 资助金额:10.0万元
- 批准年份:1995
- 负责人:向贤碧
- 依托单位:
多片液相外延GaAlAs/GaAs异质结的研究
- 批准号:69076408
- 项目类别:面上项目
- 资助金额:4.0万元
- 批准年份:1990
- 负责人:向贤碧
- 依托单位:
高效率大面积GaAs太阳电池
- 批准号:68776025
- 项目类别:面上项目
- 资助金额:4.0万元
- 批准年份:1987
- 负责人:向贤碧
- 依托单位:
国内基金
海外基金
