双表面等离子波共振腔纳米图形产生和成像光刻技术

纳米尺度光电子器件是新兴战略产业（新能源/新型显示/光电信息）的重大共性基础问题，探索高效纳米结构产生与光刻加工方法，是新型纳米器件研发的客观要求和国际研究热点。本项目提出一种基于双表面等离子共振腔的可调谐纳米结构产生机理和任意纳米图形的成像光刻技术与实验方法。重点研究（1）双表面等离子共振腔的特性以及产生可调谐深亚波长结构（周期30-200nm可调）和任意图形的成像光刻（特征线宽45nm以下）的物理机理和条件（2）纳米图形排布和成像光刻分辨率及光刻焦深与共振腔腔长、腔内匹配介质、入射光偏振态和各腔极板材料与表面特性等因素的关系和主动优化设计方法（3）建立可调谐纳米结构产生和任意纳米结构图形成像光刻的双共振腔紫外激光直写实验装置和工艺，实现30-200nm周期结构偏振器件的可调谐制作和线宽小于45nm任意图形的成像光刻，形成有特色纳米制造技术和工艺方法,为纳米器件研究提供关键技术和理论。

High performance nanoscale optoelelctric materials and/or devices are fundamental and common needs for all emerging strategic industries including clean and sustainable energy, next-generation display and optoelelctronic IT technologies. Exploration and investigation on efficient and flexible fabrication methodology of various nanostructures for different applications and the corresponding physical mechanism is key and indispensable in the whole industrial chain, which has been a hot research topic in both academic and industrial societies. In this project, we propose a novel nanostructure pattern generation and imaging photolithography technique using dual surface plasmonic resonant cavities. The major parts will include: (1) Investigating the characteristics and the physical behaviors of the dual surface plasmonic resonant cavity system and the physical mechanism as well as the implementation conditions of the tunable ultra-deep subwavelength nanostrutures (30nm-200nm tuning range) and imaging photolithography of arbitrary nanopatterns; (2) Establishing quantitative relationships between the pattern dimension / orientation of generated nanostructures and various structural/geometrical parameters, including the cavity length, in-cavity material, the mode of incident light, such as wavelength, polarization state, and the properties of the cavity walls, and the active design and optimization method based on the quantitative relationships among these parameters; (3) Setting up an experimental UV photolithography apparatus and building up appropriate experimental processes to implement the proposed tunable nanostructure generation and imaging photolithography of arbitrary nanopattern technique. Fabrication of period 30-200nm nano-grid polarizing devices and the photolithography of arbitrary pattern with a linewidth of less than 45nm will be demonstrated. This technique will provide a new way and key technique for efficient fabrication of nanoscale devices.