本课题针对ZnO纳米线紫外光电探测器噪声暗电流大、开关比低的问题，提出制备基于ZnO/MgO核壳纳米线的“金属-绝缘体-半导体”（MIS）结型紫外光电探测器，利用插入MgO绝缘层的方法来提高能带势垒、钝化表面态，从而降低器件暗电流，提高开关比。研究中首先根据纳米线的“气-液-固”形核机理，采用单步化学气相沉积法同时生长ZnO纳米线和MgO壳层，避免了二次沉积MgO壳层所导致的缺陷多，质量差的难题。然后利用聚焦离子束技术制备单根ZnO/MgO核壳纳米线MIS结型紫外光电探测器。并根据异质结能带模型，结合载流子热发射理论和隧穿理论，阐明MIS结的载流子输运机制，分析光响应过程中载流子运动规律和响应机理，研究了MgO壳层厚度、外加电压等对光响应性能的影响规律，并制备出高性能ZnO纳米线MIS结紫外光电探测器。本研究可用于制备微纳米高性能紫外光电探测器，在导弹预警、火焰探测等领域具有应用价值。

In order to solve the problems that ZnO nanowire based UV photodetector presented large noise dark current and low on-off ratio, this project propose a ZnO/MgO core/shell nanowire based Metal-Insulator-Semiconductor (MIS) Schottky diode photodetector. By using the MgO insulator layer to increase the eneggrgy barrier, passivate the surface defect states, and reduce the dark current, increse the on-off ratio. First, according to the Vapor-Liquid-Solid (VLS) mechanism, the ZnO core and MgO shell can be synthesized in one step and formed high quality interface, which aviods the large number of defects and low interfacial quality in conventional methods that grew MgO shell in second step. Then, the MIS photodetector was fabrcated by focused ion beam method. the carrier transportation mechanism of the MIS junction was approved according to the heterjunction energy band model, the thermal emission and tunneling theories. the carrier transportation rule and response mechanism during the phororesponse was analysized, the influence of MgO thichness, the applied bias voltage on photoresponse performance was studied. and finally the high-performance ZnO nanowire MIS UV photodetector was fabricated. this work can be used to fabricate high-performance UV photodetector in micro and nanoscale, and can be used in missle warning and fire alarm.