暗电流、量子效率与频率响应之间的矛盾、以及输入阻抗是制约光探测器性能和可集成性的主要因素。为提高蓝紫光探测器的性能和可集成性，我们提出SOI基LPIN PD-GTE（透明电极栅控横向PIN光电二极管）结构。在LPIN PD-GTE中，横向PIN结构和纵向MOS结构，以及透明电极的栅控作用，能有效地消除沟道长度限制，解决量子效率和频率响应之间的矛盾，降低暗电流，提高输入阻抗。通过模型构建和软件模拟，理论研究蓝紫光范围内LPIN PD-GTE的光电特性和频率响应，探索栅极电压和沟道长度对光电特性与频率响应的影响规律，得到蓝紫光探测性能最优化的栅极电压和沟道长度。根据理论研究结果，采用最优工艺参数制备ITO薄膜作为栅电极，试制LPIN PD-GTE，完成测试与优化，实现高灵敏度、大量子效率、快频率响应，且可光电集成的蓝紫光探测器，并建立其理论研究体系。

In photodetectors, performance and compatibility for integration are mainly constrained by dark current, the conflict between quantum efficiency and frequency response, and input impedance. In order to improve the performance and compatibility for integration of blue/violet photodetector, we proposed the lateral PIN photodiode gated by transparent electrode (LPIN PD-GTE) based on SOI film. Due to lateral PIN structure and vertical MOS structure, as well as gated effect of transparent electrode, LPIN PD-GTE can effectively eliminate the restriction of channel length, solve the conflict between quantum efficiency and frequency response, reduce dark current, and increase input impedance. Firstly, optoelectronic characteristics and frequency response in the blue-violet range of LPIN PD-GTE were studied by modeling and computational simulation. Secondly, the influences of gate voltage and channel length to optoelectronic characteristics and frequency response were researched to obtain the best gate voltage and channel length for detecting blue/violet light. Thirdly, according the theoretical results, adopting ITO film fabricated with the best process parameters as gate electrode, the sample of LPIN PD-GTE was fabricated. Subsequently, the test and optimization were also carried out. In the end, a novel blue-violet photodetector with high sensitivity, large quantum efficiency, fast frequency response and compatible for OEIC was achieved, and its theoretical research system was also established.