鉴于微波超宽带低噪声放大技术在未来认知无线电、雷达成像和高速无线通信等系统的广阔应用前景，如何基于硅工艺在超宽频带内实现良好噪声性能的超宽带低噪声放大器成为目前的研究热点。本课题拟针对信号频率S-K波段，中心频率X波段，相对带宽200%的特征频段，研究消除噪声源相关性的噪声分析方法，分析SiGe Hicum器件参数及噪声模型，提取影响器件超宽频带内噪声的关键参数；分析功率匹配和噪声匹配的关系，研究器件参数对匹配网络噪声的影响，提出超宽带匹配结构及噪声优化方法；分析电路噪声与频率的关系，研究电路噪声优化方法和超宽带内噪声平坦技术；最后，基于上述研究成果，形成微波超宽频带低噪声放大器的多级噪声分析及优化方法，建立包含噪声、带宽和平坦性等指标的超宽带低噪声放大器的最优化因子。研究内容属于超宽带低噪声放大器研制中亟需解决的关键问题，研究成果将有效支撑高性能硅基微波超宽带低噪声放大器的研究与设计

In view of the broad application prospects of microwave ultra wideband low noise amplifier technology in future cognitive radio, radar imaging and high-speed wireless communication system, how to achieve an amplifier with good low noise and wide band performance based on silicon technology becomes a research hotspot at present. This topic is intended for the characteristic frequency band of signal frequency S-K band, center frequency X-band, and relative bandwidth 200%, study the noise model to eliminate the noise source correlation, analyze the SiGe Hicum device parameters and noise model, extract the key parameters affect device noise within ultra-wideband. Analyze the relationship of power matching and noise matching, research the effect of device parameters on the matching network noise, propose an ultra wideband matching structure and noise optimization method. Analyze the relationship between the circuit noise and frequency, and research the optimization method of circuit noise and its flatness in ultra wideband. Finally, based on the above research results, propose a method of multi-level noise analysis and optimization of microwave ultra-wideband low-noise amplifier, establish the evaluation factors of ultra-wideband low noise amplifier include noise, bandwidth and flatness performance parameter. Research is needed to solve the key issues of the ultra-wideband low noise amplifier, and the research results will effectively support the research and design of high-performance silicon microwave ultra wideband low noise amplifier.