通过电子的量子隧穿所耦合在一起的半导体双量子点，可以利用所限制的两个电子的自旋制备具有相干调控性的叠加态和纠缠态，是固态量子计算所必需的普适量子逻辑门器件之一。本项目采用III-V族体材料中具有最大朗德g因子、最小有效电子质量的铟锑（InSb）纳米线来构筑这样的器件，同时利用InSb异质外延生长时的铟砷（InAs）纳米线制作单电子晶体管，从而原位集成电荷感应器，用于自旋状态的单发读出。底栅和顶栅相结合的方案有望对各个量子点的势垒和电学特性进行完全调控，并将各个量子点中的电子数限制在单一电子状态，从而得到二电子耦合双量子点。利用不需要液氦的超低温高磁场稀释制冷机和低噪声微信号电学测试系统，器件的电学传输特性将被系统地研究，以深入了解量子点体系的能级特点和电子自旋结构，从而建立泡利自旋阻塞态。探索利用高频电学信号来选择性地快速相干调控量子点中的自旋状态，以实现一些基本的量子逻辑门操作的演示。

Coupled semiconductor double quantum-dots via electron coherently tunneling can be used to prepare electron spin superposition and entanglement states, which can be coherently manipulated with rapid electric fields, and are indispensible universal quantum gates for solid state quantum computation approaches. In this proposal, one single InSb nanowire, which possesses the highest mobility, smallest electron effective mass, largest g factor in bulk III-V semiconductors, are employed to build the double-dot nano-structure. A charge sensor for single-shot read out is fabricated close to the double dots by using a InAs nanowire, which supporting the InSb nanowire in a chemical heteroepitaxy growth. A combination gating method relying on bottom and top electrodes allows locally generating tunneling barriers and efficiently altering quantum dot electrostatic potential, respectively. The prepared double quantum-dots can be depleted into two electron accommodation states and initiated at one in each dot, while a considerable conductance remains if tunneling events take place. By cooling the device in a cryo-free 3He/4He dilution refrigerator, the electron transport characteristics will be systematically studied in a magnetic field with a low noise, high sensitive current-voltage measurement setup. Well understanding on the single-electron energy level microscope of the quantum dots, coupling characteristics between the dots, and electron spin configurations may help us to establish Pauli spin blockade, an initial state to coherently manipulate spin states. We will explore the method to coherently manipulate the coupled spin configurations in a specific quantum dot by using high frequency electric field and to demonstrate primary quantum gate operations based on the coupling double dots with the integrated charge sensor.