课题基金基金详情
基于Si衬底GaN基多量子阱的多功能μ-LED阵列研究
结题报告
批准号:
61904086
项目类别:
青年科学基金项目
资助金额:
23.0 万元
负责人:
施政
依托单位:
学科分类:
F0403.半导体光电子器件与集成
结题年份:
2022
批准年份:
2019
项目状态:
已结题
项目参与者:
--
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中文摘要
μ-LED阵列作为信源一直是可见光通信研究热点,但在大功率光信号传输和光探测成像方向却少有问津。本项目利用Si衬底GaN基多量子阱材料具有电光、光电转换特性,采用理论模拟与实验相结合的方法,开展多功能μ-LED阵列研究。研究内容包括:1.用于大功率下高速通信。利用背后氮化物减薄技术抑制侧向光传输,减少μ-LED之间的串扰;利用单个μ-LED大带宽、高外量子效率等特点,设计串并联电路像素块,使阵列具有高输出光功率与大带宽。2.用于光探测成像。利用量子阱中的带尾效应,探索阵列在正向偏压下捕捉极限截止频率光信号的机理;利用串并联电路构成的像素块,实现在光信号发送的同时进行光探测成像,提高μ-LED阵列的功能集成性。3.转移至外部衬底。利用键合或粘合技术和商用Si衬底GaN基多量子阱体系材料,对μ-LED阵列实施衬底剥离和转移,拓展应用前景。该项目成果可助力于5G通信物联网信息器件的研发。
英文摘要
As a source of information, the μ-LED array used for visible light communication has been a research spotlight. But there is few research on optical signal transmission under high power output and light detection for imaging sensing. This project is aimed at the abilities of electro-optical and optical-electro conversion for GaN-based multiple quantum wells on Silicon Substrate. Using a combination of theoretical simulation and experimental methods, the multi-functional μ-LED array integrated data transmission and imaging sensing is fully investigated. The research contents include: 1. High speed data transmission with high output power. Using back thinning technology, the lateral light transmission in membrane is suppressed that the crosstalk between μ-LEDs is reduced. A series and parallel hybrid circuits are designed to connect μ-LEDs with high bandwidth and high EQE for carrying out high output power and high bandwidth of the μ-LED array, simultaneously. 2. For imaging sensing. By using bandtail effect in quantum well, the mechanism of the μ-LED array under forward voltage capturing the limit cutoff wavelength of the optical signal is explored. Pixel blocks composed of series and parallel connected μ-LEDs can emit light signal and detect light for imaging at the same time, thus the integration of μ-LED array is improved. 3. Transfer to the foreign substrate. The substrate of μ-LED array can be removed and the array can be transferred to foreign substrate by using bonding and adhesives techniques, which are suitable for most commercial GaN-based MQWs on silicon substrate. The results of the project may improve the information device of IoT-based 5G communications.
μ-LED阵列作为信源一直是可见光通信研究热点,但在大功率光信号传输和光探测成像方向却少有问津。本项目利用Si衬底GaN基多量子阱材料具有电光、光电转换特性,采用理论模拟与实验相结合的方法,开展多功能μ-LED阵列研究。研究内容包括:1.用于大功率下高速通信。利用背后氮化物减薄技术抑制侧向光传输,减少μ-LED之间的串扰;利用单个μ-LED大带宽、高外量子效率等特点,设计串并联电路像素块,使阵列具有高输出光功率与大带宽。2.用于光探测成像。利用量子阱中的带尾效应,探索阵列在正向偏压下捕捉极限截止频率光信号的机理;利用串并联电路构成的像素块,实现在光信号发送的同时进行光探测成像,提高μ-LED阵列的功能集成性。3.转移至外部衬底。利用键合或粘合技术和商用Si衬底GaN基多量子阱体系材料,对μ-LED阵列实施衬底剥离和转移,拓展应用前景。该项目成果可助力于5G通信物联网信息器件的研发。
期刊论文列表
专著列表
科研奖励列表
会议论文列表
专利列表
Incident-angle-insensitive toroidal metamaterial
入射角不敏感的环形超材料
DOI:10.1364/oe.453190
发表时间:2022
期刊:Optics Express
影响因子:3.8
作者:Jie Li;Jian Shao;Xin Li;Zheng Shi;Yongjin Wang
通讯作者:Yongjin Wang
DOI:10.1088/1361-6641/ab760d
发表时间:2020-03
期刊:Semiconductor Science and Technology
影响因子:1.9
作者:Shi Zheng;Zhou Qinyan;Ni Shuyu;Zhu Hongbo;Wang Yongjin
通讯作者:Wang Yongjin
DOI:10.35848/1347-4065/ab7215
发表时间:2020
期刊:Japanese Journal of Applied Physics
影响因子:1.5
作者:Shi Zheng;Fu Kang;Gao Xumin;Jiang Yan;Wang Yongjin
通讯作者:Wang Yongjin
集成MEMS应力可调控的GaN基多量子阱光电子芯片研究
  • 批准号:
    --
  • 项目类别:
    面上项目
  • 资助金额:
    52万元
  • 批准年份:
    2022
  • 负责人:
    施政
  • 依托单位:
国内基金
海外基金