InGaN基半导体是发展全色LED最有前途的材料体系，基于高In组分InGaN绿光LED在显示和固态照明方面具有重大应用，而高质量高In组分InGaN以及量子阱(对应于绿光LED)的高质量制备至关重要。本申请项目以解决高In组分InGaN及量子阱的晶体质量差，内量子效率低问题为目标，提出基于脉冲沉积和InN嵌入法开展单一稳定相高质量高In组分InGaN材料的MOCVD制备以及在此基础上的光学性质研究，内容涉及高In组分InGaN外延生长及其动力学机理、合金行为及演化、量子阱结构设计、制备和界面控制，量子阱结构中应力演化以及InGaN及其量子阱结构中发光动力学行为等内容。本项目申请人及所在课题组近年来一直从事III族氮化物半导体材料制备和物性研究，具备良好的工作基础和实验条件。本项目的研究内容处于当前国际上III族氮化物半导体材料、物理和器件研究的前沿领域，具有重要的科学意义和应用价值。

InGaN-based semiconductor is the most promising material system for the full-colour LED. Based on the significant application in the displays and solid-state lighting, the preparation of high quality and high In content InGaN quantum well (corresponding to green LEDs) is very important. To solve the high crystal quality and high internal quantum efficiency of InGaN quantum well, the project is proposed to study the epitaxial growth and optical properties of high In content InGaN epilayers and quantum well structures based on pulsed deposition and InN embedding techniques by MOCVD. The content relates to the mechanism of InGaN epitaxial growth dynamics, alloy behavior and evolution, design, preparation and interface control of quantum well structures, the stress evolution and luminescence dynamics in InGaN quantum well structures. The project applicant and the research group have been engaged in research on III-nitride semiconductor for many years, and have a good basis for this project with best experimental conditions. The project with important scientific significance and application value is the frontier of international research for III-nitride semiconductor materials, physics and device.