CMOS毫米波功率放大器的设计，一直受到CMOS工艺在击穿电压及高频增益等方面的制约。由于缺少有效的毫米波功率放大器增益增强与片上功率合成的电路拓扑结构及准确的毫米波MOSFET大信号模型，严重影响了CMOS毫米波功率放大器的性能指标，使其无法满足全球60GHz以及我国Q-LinkPAN标准毫米波短距离通信的需求。本项目围绕毫米波器件参数提取与模型修正、增益增强与片上功率合成技术等设计CMOS毫米波功率放大器的关键问题展开研究，包括（1）研究全网络参数计算的MOSFET毫米波测量去嵌入方法；（2）研究基于LC阻抗调节与3D电磁屏蔽的毫米波功率放大器增益增强技术；（3）基于人工变压器片上功率合成的高输出CMOS毫米波功率放大器。本研究将有效地填补毫米波MOSFET测量去嵌入与大信号模型方面的空白，创新CMOS毫米波功率放大器的设计方法，促进基于CMOS工艺的毫米波高速无线通信技术的快速发展。

The CMOS millimeter-wave power amplifier design is always limited by the breakdown voltage and high frequency gain of CMOS process. Due to shortage of effective gain-boosting technique and on-chip power combining technique for millimeter-wave power amplifier design and accurate millimeter-wave MOSFET large signal model, the performance of CMOS millimeter-wave power amplifier is badly affected, which makes it unable to satisfy the requirement of millimeter-wave short range communication of global 60GHz and our national Q-LinkPAN standard. This project revolves around the key issues of CMOS millimeter-wave power amplifier design, such as parameter extraction of millimeter-wave device and model correction, gain-boosting technique and on-chip power combining technique. The whole research includes: (1) Research on all network parameter calculation based de-embedding method. (2) Research on LC impedance tuning and 3D ground-shielding based millimeter-wave power amplifier gain-boosting technique. (3) Artificial transformer on-chip power combining based high output CMOS millimeter-wave power amplifier. This research will effectively fills the blank of millimeter-wave MOSFET measurement de-embedding and large-signal model and improves the design methodology of CMOS millimeter-wave power amplifier. In addition, it could promote the rapid development of CMOS process based millimeter-wave high-speed wireless communication technology.