AlInGaN基材料光偏振调制及其在深紫外LED上应用研究

由于体积小、寿命长、能耗低、波长可调等优点紫外LED 比传统光源有更大优势，在众多领域有广泛应用潜力。高Al组分AlGaN光偏振模式转变导致的量子阱出光效率低是造成深紫外LED量子效率低的主因，严重制约了深紫外LED的商业化。前期研究表明AlInGaN在深紫外波段有良好的晶体质量和带边发光性能，但是对AlInGaN光偏振调制的研究国内外尚无报道。本项目首先基于第一性原理研究AlInGaN薄膜光偏振模式转换与能带分裂的内在关联。其次，建立并完善AlInGaN量子阱的K.P模型，将应力关系引入模型中，建立以垒、阱层组分为基本参量的耦合方程。通过解方程求得不同结构条件下量子阱光偏振转换的临界组分。最后根据所得结构参数制备具有良好量子效率的AlInGaN深紫外量子阱。力图从能带工程出发，以理论结合实验的方法，实现对于AlInGaN光偏振的人工调制，为高效深紫外LED的制备提供新思路。

Compare with the conventional UV lights, LED has a lot of advantages such as high luminous efficiency, environmental protection, long life and has extensive potential applications in numerous fields. The low light extraction efficiency caused by light polarization switching as a high Al content in active region, Is the main factors leading to the low LED quantum efficiency, seriously restricted the development of deep UV LED. Due to the lattice constants and band width can independently adjust, AlInGaN with good crystal quality in deep ultraviolet region. But there is no reports on optical polarization of AlInGaN. Firstly, construction first principle mode of AlInGaN, research on the energy band change with the component various, found the contact on polarization switching with the component. Secondly, to build and improve the K.P model of AlInGaN quantum well, introduced the strain into the model, to establish barrier, well layercomponent as the basic parameters of the effective mass coupling equation. Throughthe critical conditions under the conditions of different quantum well optical polarizationtransformation equation. Finally, the calculated structure, using the technology of MBE epitaxial growth has excellent luminous efficiency AlInGaN deep ultraviolet quantum well, through the research of this project, is expected to provide active area materials selection and a new theoretical model for high efficiency deep UV LED.