Effect of annealing temperature on the optical property of high Cd content CdZnO films
Effect of annealing temperature on the optical property of high Cd content CdZnO films
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退火温度对高Cd含量CdZnO薄膜光学性能的影响
DOI:
10.1016/j.spmi.2016.07.010
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发表时间:
2016-09
影响因子:
3.1
通讯作者:
zhao liancheng
中科院分区:
文献类型:
--
作者:
liu teren;wang dongbo;Guo fengyun;jiao shujie;wang jinzhong;liu yuhang;luan chunyang;cao wenwu;zhao liancheng
CdZnO films with high Cd contents (59%) have been deposited on quartz substrate by radio-frequency (RF) magnetron sputtering. The as-deposited CdZnO films can hardly show detectable photoluminescence (PL). However, once subjected to suitable annealing temperature, the CdZnO films exhibit pronounced PL. Furthermore, when the annealing temperature at 300 C and above, that the CdZnO are changed from the single phase of the rs structure to involving w, zb, and rs phases. Consequently, reliable formation and optical property improvement of the CdZnO layers are achieved through annealing temperature at 300 C
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