针对LIGBT导通压降Von－关断损耗Eoff－安全工作区SOA间的矛盾关系，本项目开展以下创新研究：1、提出双自适应型高速低损耗SOI LIGBT新结构，研究其降低Von与Eoff、拓宽SOA的机理。创新机理：①集成齐纳二极管与阳极MOS结构，关断过程中分别自适应开启空穴与电子的快速抽取通路，加速器件关断而降低Eoff；低压导通时二者均自适应性处于关闭状态，不影响器件开态工作且无snapback现象；②短路或饱和导通状态，集成齐纳二极管自适应开启空穴抽取通路以降低饱和电流密度，提升抗闩锁/短路能力与开态击穿电压；③阴极多沟道槽栅增强电子注入效率以获得低Von；④阻断时实现类MOS耐压机制。较常规平面栅LIGBT，新结构Eoff与Von均降低20%以上。2、构建器件关断损耗与dVA/dt解析模型，为器件设计提供理论指导。3、实验研制SOI LIGBT新结构样品。本项目具有创新性与应用价值。

To address the contradictory relationship among the on-state voltage drop (Von), the turn-off loss (Eoff) and the safe operation area (SOA) in LIGBT devices, we have performed the following innovative researches: 1. A novel dual self-adaptive SOI LIGBT featured with low loss and high speed is proposed. Its mechanism to reduce the Von and Eoff at the same time with improving SOA is also investigated. The operation mechanism of the proposed device includes: ① During the turning off period, the integrated zener diode at the cathode side and MOS structure at the anode side self-adaptively turn on the hole and electron extraction paths respectively, which improves the turn-off speed and decreases the turn-off loss. In the on-state, the integrated zener diode at the cathode side and MOS structure at the anode side are self-adaptively turned off which allows the proposed device to operate as a normal LIGBT without snapback effect. ② During the short circuit and saturation conduction state, the integrated zener diode are self-adaptively turned on to extract holes in the drift region to decrease the carrier density and saturation current density, so as to improve the immunities of short circuit/latch-up and the on-state breakdown voltage. ③ The multi-channel cathode trench gates enhance the electron injection and increase the channel density, then the proposed device achieves a low on-state voltage drop. ④ In the blocking state, the self-adaptive MOS structure at the anode side makes the proposed device to achieve a MOS-type breakdown mechanism. Compared with conventional LIGBT with planar gate, the proposed device decreases the Von and Eoff by 20%, respectively. 2. The analytical model of turn-off loss and dVA/dt is constructed to provide theoretical basis for design of the proposed device. 3. The proposed novel SOI LIGBT is to be fabricated experimentally. This project exhibits high innovative significance and practical value.