SiGe BiCMOS 低噪声放大器（LNA）广泛应用于空间射频收发系统的第一级模块，其核心器件SiGe HBT天然具有优异的低温特性、抗总剂量效应和位移损伤效应的能力。研究表明，SiGe HBT器件瞬态电荷收集引起的空间单粒子效应是制约SiGe BiCMOS电路空间应用的瓶颈问题。然而，单粒子效应形成的“漏斗”电势会显著改变载流子的寿命，载流子能够越过深沟槽隔离结构并参与相邻器件的载流子输运，这使得SiGe BiCMOS电路的空间单粒子效应电荷收集机制比SiGe HBT器件更加复杂。本项目拟开展典型工艺SiGe BiCMOS LNA电路的单粒子效应电荷收集机制研究，结合数值模拟和激光微束试验，揭示电路内部、器件之间的瞬态电荷收集机制，分析敏感节点瞬态脉冲对LNA电路放大功能的影响，定位单粒子效应的敏感区域，为我国SiGe BiCMOS工艺空间应用提供理论依据和技术支持。

SiGe BiCMOS Low Noise Amplifiers (LNA) are widely used in the first level of RF transceiver system in space. The core part of SiGe BiCMOS LNA is SiGe heterojunction bipolar transistor (SiGe HBT) which naturally presents excellent temperature characteristic and favorable build-in Total Ionizing Dose and Displacement Damage hardness without any radiation hardening. The related studies indicate that SEE of SiGe BiCMOS circuits is primarily driven by the charge collection of SiGe HBT. However, the "funnel" potential formed by SEE will significantly change the carrier lifetime and the carrier can cross over the deep trench isolation structure and the carriers transport between adjacent devices make the charge collection of SiGe BiCMOS circuits more complicated than SiGe HBT. This project intends to investigate the charge collection mechanism of typical SiGe BiCMOS LNA. The numerical simulation and laser micro-beam experiment will be combined to reveal the mechanism of transient charge collection between SiGe HBT and MOS. The transient pulses of sensitive nodes in SiGe BiCMOS LNA circuit will be analyzed and the SEE sensitive areas will be precisely defined. Finally, the key influence factors of SEE on domestic SiGe BiCMOS LNA will be summarized. Theoretical basis and technical support will be provided by this work for the SiGe BiCMOS application in space and SEE hardening design.