超宽调谐InAs/InP啁啾结构量子点外腔激光器制备与应用研究

本项目面对新一代信息技术发展的应用需求和科学前沿，以发展新型低功耗、宽波长范围连续可调谐的半导体激光器为目标，结合申请人在InAs/InP自组织量子点材料外延及激光芯片制备方面的研究基础，开展基于InAs/InP啁啾结构量子点材料的宽带可调谐外腔激光器研究。重点研究相关的宽谱啁啾结构量子点材料生长技术、宽谱抗反射波导器件结构设计、器件工艺制备及性能测试分析；揭示量子点增益器件与光场的相互作用机制，探索扩展波长调谐范围、改进输出光谱质量以及提高电光转换效率的新器件结构和新器件原理，目标是制备出波长调谐范围超过200nm的InAs/InP量子点可调谐外腔激光器。本项目中，我们提出采用两温两步盖层的宽谱InAs/InP量子点生长新方案及进一步利用该材料的宽谱可调谐外腔激光器芯片所必须的宽谱抗反射方案等。为发展我国具有自主知识产权的宽带可调谐外腔激光器提供新思路和新技术。

Based on the requirement of a new-generation IT development and scientific frontier, and aiming at realizing low power consumption, broad wavelength range continuously tunable semiconductor lasers, we plan to carry out the research on fabrication of broadly tunable external cavity lasers (TECLs) based on InAs/InP quantum dots (QDs). Combining our research works in epitaxial growth of InAs/InP self-organized QDs as well as in laser fabrication, we focus on the investigation of related materials growth, device structure design, chip process and device performance measurement. We try to develop new growth techniques for the chirped stacked InAs/InP QDs with broad gain spectrum and with high crystal quality, and try to reveal the interactive mechanisms between the QD devices and the light field of external cavity to extend wavelength tuning range, to improve optical beam quality and to increase electro-optical conversion efficiency. Finally, we will realize InAs/InP QD TECLs with the wavelength tuning range over 200nm.In this project, we propose a new scheme for the growth of broad-spectrum InAs/InP quantum dots with two-temperature and two-step capping procedure, and the broad-spectrum anti-reflection scheme necessary for further utilizing the material for wide-spectrum tunable external cavity laser chips. It provides new ideas and technologies for the development of broadband tunable external cavity lasers with independent intellectual property rights in China.