1.55微米InP基InGaAsP量子阱-InAs量子点耦合激光器研究

本项目针对InAs/InP量子点激光器发展所面临的阈值电流密度过高以及激光器激射波长可控性差的关键问题，结合申请人在量子点材料外延生长及激光器制备方面的研究基础，提出开展1.55微米InP基InGaAsP量子阱-InAs量子点耦合激光器制备相关基础研究。充分发挥半导体量子阱、量子点材料的各自优势，通过理论结构设计与器件制备，探索降低InAs/InP量子点激光器阈值电流、提高激光器波长可控性以及电光转化效率的新途径，为实现高性能的InP基长波长激光器的制备提供必要的物理基础和关键技术。

To meet the key scientific issues of InAs/InP quantum dot laser development, we will carry out the study of 1.55 micron InP-based InGaAsP quantum well coupled InAs quantum dot lasers fabrication based on the research foundation of InAs/InP epitaxial growth we have achieved lately. In this design, we hope to fully utilize both the respective advantages of quantum well as well as quantum dot materials, and find a new way to fabricate high performance lasers with low threshold current, high temperature stability, high wavelength controllability and high electro-optical conversion efficiency. Through the implementation of this project we hope to contribute some new idea and independent innovation to the fabrication of high-performance InP based long wavelength semiconductor lasers.