NBTI退化效应已成为影响集成电路可靠性的重要因素之一。本项目从NBTI效应退化机制入手，研究其对集成电路特性造成的影响，并提出解决措施。工作内容包括：（1）提出新的晶体管和门电路退化模型，该模型综合考虑NBTI效应及加工参数偏差对器件特性造成的影响，能够较为准确的描述电路退化过程；（2）提出了基于序贯最小优化方法的集成电路退化预测模型，对电路全寿命周期中各阶段退化程度的上限值进行预测；（3）提出面向NBTI效应的故障预测方法，设计故障预测单元及具有抗退化能力的电路结构，减小退化效应对电路造成的影响。本项目的研究成果将显著提高集成电路退化预测模型的准确性，为电路可靠性设计提供参考依据；此外，提出的故障预测方法可用于指导集成电路设计工作，在保证电路性能的前提下，延长其生命周期。

NBTI effect is one of the main reasons that affect the long-term reliability of integrated circuits. In this project, we make some research on the degradation mechanism of NBTI effect firstly. Then we analyze its effect on the characteristic of intergrated circuits and propose corresponding solutions. The research work includes: (1) a new transistor and gate degradation model is proposed, the NBTI effect and process variation are all included in this model, so it can describe the degradation process more accurately; (2) a degradation prediction method for integrated circuit based on Sequencial Minimization Optimization method is proposed. With this method, a designer can predict the worst degradation effect of a given circuit at each period of its entire lifetime; (3) fault prediction method under NBTI effect is proposed, and the design method of fault prediction unit and circuit structure with degradation-resistance ability is proposed, so that the degradation effect will be minimized. The achievements of this project can increase the accuracy of degradation prediction model greatly, so that the designer can acquire the guidance in reliability design for integrated circuits. Besides, the proposed fault prediction method can serve as the guidance for high-reliability circuit design. With the fault prediction method, the lifetime of integrated circuit can be improved, without influencing the circuit's performance.