具有开放大孔结构的氧化镍/石墨烯/氧化镍夹心纳米管阵列的可控制备及其超电容特性研究

NiO的电导率和结构稳定性是影响NiO比电容，倍率性能和循环性能的主要因素，是获得高赝电容性能的技术关键。利用石墨烯的高强高导电性能，本项目采用ZnO模板结合电沉积，化学气相沉积等技术制备具有开放大孔结构的氧化镍/石墨烯/氧化镍夹心纳米管阵列材料，使石墨烯兼备导电功能和结构强化功能，实现石墨烯上下两面和纳米管内外管壁的融合利用。项目系统研究合成工艺主要参数与夹心纳米管阵列结构的关系，建立微结构可控的合成工艺；通过循环伏安、交流阻抗等电化学技术研究石墨烯的高速导电网架和复合结构强化作用对NiO赝电容特性的影响和机制，阐明石墨烯及其夹心结构在NiO电极材料结构中的科学意义；研究活性材料和纳米管阵列的结构与赝电容性能的关系，建立NiO与纳米管阵列材料的结构设计理论。最终获得以石墨烯夹心复合结构，纳米管阵列和管内外负载NiO为特色的NiO新材料，为石墨烯应用和超电容材料开发提供新的理论和实验依据。

Conductivity and structure stability of NiO are main factors to influence specific capacitance, rate performance and cycling performance of NiO, and technology keys to obtain high pseudocapacitance performance. Based on high strength and high conductivity of graphene, this proposal adopts ZnO template, chemical vapor deposition and electrodeposition to prepare NiO/Graphene/NiO composite nanotube array materials with the sandwiched graphene and open macroporous structure. Graphene shows electric conduction function and structure-enhanced function. The two planes of graphene combined with inside and outside tube wall of nanotube are utilized. In this proposal, the relationship between the main parameters of the synthesis process with sandwich nanotube array structure is investigated systematically, and a controlled synthesis process is proposed. Using cyclic voltammetry and AC impedance, we study the influence and its mechanism of hi-speed conductive framework and composite strengthening effect of graphene on pseudocapacitance properties of NiO, illustrating the significance of graphene and its sandwich structure; studying the relationship between the structure of active materials and nanotube array with pseudocapacitance performances; establishing structure design theory of NiO and nanotube array; obtaining NiO new materials with high pseudocapacitance performances whose features are the sandwiched graphene, NiO inside and outside nanotube, and nanotube array; providing the theoretic and experimental basis for application of graphene and the development of high-performance supercapacitor materials.