因具有禁带宽度合适、吸收系数大、价廉、毒性小等优点，Cu2ZnSnS4（CZTS）薄膜太阳电池的研究受到极大关注，但它通常以有毒性的CdS作为缓冲层。为此，本项目提出以无Cd的In2S3为缓冲层，研究CZTS/ In2S3异质结的制备和光伏特性。拟利用真空蒸发法和硫化（或退火）工艺在玻璃基片上先后制备CZTS和In2S3薄膜，构建CZTS/In2S3异质结。探究薄膜的制备工艺对CZTS/ In2S3异质结的组成、微结构和光电性能的影响规律，阐明CZTS/In2S3异质结的界面特性、能带结构、载流子输运等问题。将基于第一性原理的理论计算与实验结果相结合，建立CZTS/In2S3异质结的能带结构模型。探索SLG/Mo/CZTS/ In2S3/ZnO:Al/Ni/Al太阳电池的制备工艺，研究器件膜层结构和参数对CZTS太阳电池性能的影响，以期获得性能优良的CZTS太阳电池。

Cu2ZnSnS4 (CZTS) thin film solar cells have attracted much reseach interests because CZTS has the following advantages: appropriate bandgap of 1.4-1.5eV, high theoretical conversion efficiency, large absorption coefficient,low cost and little toxicity. But the buffer layers of the CZTS solar cells are normally based on CdS semiconductors with toxic Cd. In this proposal, based on Cd-free In2S3 buffer layers,the preparation and photovoltaic properties of CZTS/ In2S3 heterjunctions will be investigated. The CZTS and In2S3 films will be deposited successively on glass substrates by vacuum evaporation and sulphurization (or annealing) to obtain CZTS/In2S3 heterjunctions. The influences of the preparation process on the constitutes,micro-structures and photoelectrical properties of the CZTS/ In2S3 heterjunctions will be explored. The interfacial characteristics, energy band diagram, and transportation mechanism of the carriers in the CZTS/ In2S3 heterjunction will be clarified. By combinating the theoretical simulation of the first-principle with the experimental results,the band alignment of the CZTS/In2S3 heterjunction will be established. The fabrication of SLG/Mo/CZTS/ In2S3/ZnO:Al/Ni/Al solar cells will be carried out, and the effects of the device structures and parameters on the performances of the CZTS solar cells will be studied in order to obtain CZTS solar cells with good quality.